AOU4N60

AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View Bottom View VDS 700V@150℃ ID (at VGS=10V) 4A RDS(ON) (at VGS=10V) < 2.3Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Bottom View Top View TO251 Bottom View Top View D D D S G G S G S D D S G G D S S D G G S AOI4N60 AOD4N60 AOU4N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB VGS TC=25°C TC=100°C Maximum 600 Units V ±30 V 4 ID 2.6 A Pulsed Drain Current C IDM Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 118 mJ Single plused avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS 235 50 5 104 mJ V/ns 0.83 -50 to 150 W/ oC °C 300 °C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.3.0: March 2014 14 dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC W Typical 43 Maximum 55 Units °C/W 1 0.5 1.2 °C/W °C/W www.aosmd.com Page 1 of 6 AOD4N60/AOI4N60/AOU4N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ID=250µA, VGS=0V, TJ=150°C 700 ID=250µA, VGS=0V VDS=600V, VGS=0V 0.67 V V/ oC 1 VDS=480V, TJ=125°C 10 ±100 3.4 µA 4.1 4.5 nΑ V 2.3 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A 1.8 gFS Forward Transconductance VDS=40V, ID=2A 6 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 4 A ISM Maximum Body-Diode Pulsed Current 14 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 420 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=480V, ID=4A S 0.76 528 640 pF 35 53 70 pF 2.5 4.8 7 pF 1.2 2.5 3.8 Ω 9.5 12 14.5 nC 2.8 3.6 4.5 nC 2.2 4.4 6.6 nC VGS=10V, VDS=300V, ID=4A, RG=25Ω 17 ns 26 ns 34 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V 150 190 230 Qrr Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V 1.9 2.4 3 21 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using