AOUS66616
60V N-Channel AlphaSGT TM
General Description
Product Summary
VDS
• Trench Power MOSFET - AlphaSGT TM technology
• Low RDS(ON)
• Excellent Gate Charge x RDS(ON) Product (FOM)
• RoHS and Halogen-Free Compliant
Applications
ID (at VGS=10V)
60V
92A
RDS(ON) (at VGS=10V)
< 3.3mΩ
RDS(ON) (at VGS=6V)
< 4.7mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC
Converters
• Industrial and Motor Drive applications
Top View
D
UltraSO-8TM
Bottom View
D
G
S
G
S
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOUS66616
Ultra SO8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
Avalanche Current
C
Avalanche energy
L=0.3mH
TC=25°C
Power Dissipation B
TC=100°C
C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.2.0: April 2019
IAS
35
A
EAS
184
mJ
92.5
Steady-State
Steady-State
RqJA
RqJC
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W
37
6.2
W
4.0
TJ, TSTG
Symbol
t ≤ 10s
A
26
PDSM
TA=70°C
A
33
PD
TA=25°C
A
V
330
IDSM
TA=70°C
±20
80
IDM
TA=25°C
Continuous Drain
Current
Units
V
92
ID
TC=100°C
Maximum
60
-55 to 150
Typ
15
40
1.1
°C
Max
20
50
1.35
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOUS66616
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250mA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250mA
TJ=55°C
5
±100
nA
3.4
V
2.6
3.3
4.1
5.2
VGS=6V, ID=20A
3.5
4.7
2.4
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=20A
100
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
VGS=10V, VDS=30V, ID=20A
0.6
S
V
92
A
pF
940
pF
pF
1.25
1.9
Ω
42.5
60
nC
Gate Source Charge
Qgd
Gate Drain Charge
Qoss
Output Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, di/dt=500A/ms
Qrr
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms
87
VGS=10V, VDS=30V, RL=1.5W,
RGEN=3W
mΩ
2870
Qgs
VGS=0V, VDS=30V
mΩ
1
38
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Body Diode Reverse Recovery Time
μA
2.9
Static Drain-Source On-Resistance
Output Capacitance
Units
V
1
VGS=10V, ID=20A
Coss
Max
60
VDS=60V, VGS=0V
IDSS
RDS(ON)
Typ
12
nC
10
nC
54
14.5
nC
ns
15.5
ns
33
ns
12.5
ns
26
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
0
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZqJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZqJC.RqJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RqJC=1.35°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: April 2019
www.aosmd.com
Page 4 of 6
AOUS66616
100
100
80
80
Current rating ID (A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
40
20
60
40
20
0
0
0
25
50
75
100
125
150
0
25
TCASE (°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
2
TA=25°C
1000
Power (W)
Eoss(uJ)
1.5
100
1
10
0.5
0
0
20
40
60
1
1E-05
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H)
VDS (Volts)
Figure 14: Coss stored Energy
ZqJA Normalized Transient
Thermal Resistance
0.001
10
1
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
RqJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PDM
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.2.0: April 2019
www.aosmd.com
Page 5 of 6
AOUS66616
Figure
A:Charge
Gate Charge
Test Circuit
& Waveforms
Gate
Test Circuit
& Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Figure B: Resistive Switching Test Circuit & Waveforms
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Figure C:
Unclamped
InductiveSwitching
Switching (UIS)
(UIS) Test
Unclamped
Inductive
TestCircuit
Circuit&&Waveforms
Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Figure
D:Recovery
Diode Recovery
Test Circuit
& Waveforms
Diode
Test Circuit
& Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.2.0: April 2019
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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