AOUS66616

AOUS66616 60V N-Channel AlphaSGT TM General Description Product Summary VDS • Trench Power MOSFET - AlphaSGT TM technology • Low RDS(ON) • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications ID (at VGS=10V) 60V 92A RDS(ON) (at VGS=10V) < 3.3mΩ RDS(ON) (at VGS=6V) < 4.7mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications Top View D UltraSO-8TM Bottom View D G S G S G S Orderable Part Number Package Type Form Minimum Order Quantity AOUS66616 Ultra SO8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH TC=25°C Power Dissipation B TC=100°C C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.2.0: April 2019 IAS 35 A EAS 184 mJ 92.5 Steady-State Steady-State RqJA RqJC www.aosmd.com W 37 6.2 W 4.0 TJ, TSTG Symbol t ≤ 10s A 26 PDSM TA=70°C A 33 PD TA=25°C A V 330 IDSM TA=70°C ±20 80 IDM TA=25°C Continuous Drain Current Units V 92 ID TC=100°C Maximum 60 -55 to 150 Typ 15 40 1.1 °C Max 20 50 1.35 Units °C/W °C/W °C/W Page 1 of 6 AOUS66616 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA TJ=55°C 5 ±100 nA 3.4 V 2.6 3.3 4.1 5.2 VGS=6V, ID=20A 3.5 4.7 2.4 TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A 100 VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz VGS=10V, VDS=30V, ID=20A 0.6 S V 92 A pF 940 pF pF 1.25 1.9 Ω 42.5 60 nC Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/ms Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 87 VGS=10V, VDS=30V, RL=1.5W, RGEN=3W mΩ 2870 Qgs VGS=0V, VDS=30V mΩ 1 38 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Body Diode Reverse Recovery Time μA 2.9 Static Drain-Source On-Resistance Output Capacitance Units V 1 VGS=10V, ID=20A Coss Max 60 VDS=60V, VGS=0V IDSS RDS(ON) Typ 12 nC 10 nC 54 14.5 nC ns 15.5 ns 33 ns 12.5 ns 26 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=1.35°C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: April 2019 www.aosmd.com Page 4 of 6 AOUS66616 100 100 80 80 Current rating ID (A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 20 60 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) 10000 2 TA=25°C 1000 Power (W) Eoss(uJ) 1.5 100 1 10 0.5 0 0 20 40 60 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) VDS (Volts) Figure 14: Coss stored Energy ZqJA Normalized Transient Thermal Resistance 0.001 10 1 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA RqJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: April 2019 www.aosmd.com Page 5 of 6 AOUS66616 Figure A:Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B: Resistive Switching Test Circuit & Waveforms Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: Unclamped InductiveSwitching Switching (UIS) (UIS) Test Unclamped Inductive TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D:Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.2.0: April 2019 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6