AOV20S60

AOV20S60 600V 18A α MOS TM General Description Product Summary The AOV20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 80A RDS(ON),max 0.25Ω Qg,typ 20nC Eoss @ 400V 4.9µJ Power Transistor 100% UIS Tested 100% Rg Tested DFN8X8 Top View Bottom View D D G S Pin1:G G S Pin2: Driver Source S AOV20S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C V A 80 3.6 IDSM TA=70°C ±30 13 IDM TA=25°C Continuous Drain Current Units V 18 ID TC=100°C Maximum 600 A 2.9 Avalanche Current C IAR 3.4 A Repetitive avalanche energy C EAR 23 mJ Single pulsed avalanche energy G EAS 188 mJ TC=25°C Power Dissipation B Derate above 25oC TA=25°C Power Dissipation A TA=70°C MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum lead temperature for soldering J purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: September 2013 PD PDSM dv/dt TJ, TSTG TL Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 12 40 0.35 www.aosmd.com 278 W 2.2 8.3 W/ C o W 5.3 100 20 -55 to 150 V/ns 300 °C °C Max 15 50 0.45 Units °C/W °C/W °C/W Page 1 of 7 AOV20S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Units 600 - - 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM - ±100 3.4 4.1 nΑ V VGS=10V, ID=10A, TJ=25°C - 0.21 0.25 Ω VGS=10V, ID=10A, TJ=150°C - 0.53 0.66 Ω IS=10A,VGS=0V, TJ=25°C - 0.84 - V Maximum Body-Diode Continuous Current - - 18 A Maximum Body-Diode Pulsed CurrentC - - 80 A - 1038 - pF - 68 - pF - 56.6 - pF - 176.5 - pF VGS=0V, VDS=100V, f=1MHz - 2.1 - pF f=1MHz - 9.3 - Ω - 20 - nC - 4.6 - nC nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) 2.8 VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=10A Qgs Gate Source Charge Qgd Gate Drain Charge - 7.6 - tD(on) Turn-On DelayTime - 27.5 - ns tr Turn-On Rise Time - 32 - ns - 87.5 - ns - 30 - ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time VGS=10V, VDS=400V, ID=10A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=10A,dI/dt=100A/µs,VDS=400V - 350 - ns Irm IF=10A,dI/dt=100A/µs,VDS=400V - 27 - Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V - 5.7 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using