AOW10N65

AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 750V@150℃ 10A RDS(ON) (at VGS=10V) < 1Ω 100% UIS Tested 100% Rg Tested TO-262 TO-262F Bottom View Top View G D Top View S S D Bottom View G G AOW10N65 D S D S D G G S AOWF10N65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOW10N65 AOWF10N65 Symbol Drain-Source Voltage VDS 650 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ±30 V 10 ID Units V 10* 6.2* 6.2 A Pulsed Drain Current C IDM Avalanche Current C IAR 3.4 A Repetitive avalanche energy C EAR 173 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 347 5 mJ V/ns W 36 PD 28 2 0.22 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOW10N65 65 AOWF10N65 65 Units °C/W 0.5 0.5 -4.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1: Nov 2011 250 www.aosmd.com Page 1 of 6 AOW10N65 /AOWF10N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 750 V ID=250µA, VGS=0V 0.75 V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 ±100 3 µA 4 4.5 nΑ V 1 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A 0.77 gFS Forward Transconductance VDS=40V, ID=5A 13 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 10 A ISM Maximum Body-Diode Pulsed Current 36 A pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=520V, ID=10A S 0.73 V 1095 1369 1645 80 118 154 pF 6 10 14 pF 1.7 3.5 5.5 Ω 22 27.7 33 nC 6 7.4 9 nC 5.5 11.3 17 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=10A,dI/dt=100A/µs,VDS=100V 255 320 385 Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V 4.8 6 7.2 Body Diode Reverse Recovery Time VGS=10V, VDS=325V, ID=10A, RG=25Ω 30 ns 61 ns 74 ns 53 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using