AOW11S60/AOWF11S60
600V 11A α MOS TM Power Transistor
General Description
Product Summary
The AOW11S60 & AOWF11S60 have been fabricated
using the advanced αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
700V
IDM
45A
RDS(ON),max
0.399Ω
Qg,typ
11nC
Eoss @ 400V
2.7µJ
100% UIS Tested
100% Rg Tested
TO-262
TO-262F
D
Top View
Bottom View
Top View
Bottom View
G
G
D
S
S
D
G
S
G
AOW11S60
D
S
D
600
Gate-Source Voltage
±30
Continuous Drain
Current
VGS
TC=100°C
S
AOWF11S60
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOW11S60
Symbol
Drain-Source Voltage
VDS
TC=25°C
G
AOWF11S60
11
ID
Units
V
V
11*
8
8*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
2
A
Repetitive avalanche energy C
EAR
60
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
45
120
PD
W
1.4
0.22
W/ oC
100
20
-55 to 150
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
V/ns
°C
300
°C
AOW11S60
AOWF11S60
Units
65
65
°C/W
0.5
0.7
-4.5
°C/W
°C/W
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev 3: Jan 2012
28
dv/dt
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
mJ
178
www.aosmd.com
Page 1 of 6
AOW11S60/AOWF11S60
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
600
-
-
ID=250µA, VGS=0V, TJ=150°C
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.8
3.5
4.1
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=3.8A, TJ=25°C
-
0.35
0.399
Ω
VGS=10V, ID=3.8A, TJ=150°C
-
0.98
1.11
Ω
IS=5.5A,VGS=0V, TJ=25°C
-
0.84
-
V
Maximum Body-Diode Continuous Current
-
-
11
A
Maximum Body-Diode Pulsed CurrentC
-
-
45
A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
-
545
-
pF
-
37.3
-
pF
-
30.8
-
pF
-
93.6
-
pF
VGS=0V, VDS=100V, f=1MHz
-
1.42
-
pF
VGS=0V, VDS=0V, f=1MHz
-
16.5
-
Ω
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
-
11
-
nC
-
2.8
-
nC
Gate Drain Charge
-
3.8
-
nC
Turn-On DelayTime
-
20
-
ns
-
20
-
ns
-
59
-
ns
-
20
-
ns
IF=5.5A,dI/dt=100A/µs,VDS=400V
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=480V, ID=5.5A
VGS=10V, VDS=400V, ID=5.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
-
250
-
ns
Irm
IF=5.5A,dI/dt=100A/µs,VDS=400V
-
21
-
Qrr
Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V
-
3.3
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
