AOW12N60

AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary The AOW12N60 & AOWF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 12A RDS(ON) (at VGS=10V) < 0.55Ω 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View G G D S S D G S G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOW12N60 AOWF12N60 Symbol Drain-Source Voltage 600 VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ±30 V 12 ID Units V 12* 9.7 9.7* A Pulsed Drain Current C IDM 48 Avalanche Current C IAR 5.5 A Repetitive avalanche energy C EAR 450 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 900 5 mJ V/ns W PD 28 2.2 0.22 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOW12N60 65 AOWF12N60 65 Units °C/W 0.5 0.45 -4.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev2: June 2010 278 www.aosmd.com Page 1 of 6 AOW12N60AOWF12N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.65 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 3 µA 4 4.5 nΑ V 0.55 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A 0.46 gFS Forward Transconductance VDS=40V, ID=6A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 12 A ISM Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=480V, ID=12A S 0.72 1400 1751 2100 pF 130 164 215 pF 10 13 19 pF 2.5 3.3 5 Ω 40 50 nC 9 11 nC 17.9 27 nC 39 50 ns VGS=10V, VDS=300V, ID=12A, RG=25Ω 70 85 ns 122 150 ns 74 90 ns IF=12A,dI/dt=100A/µs,VDS=100V 311 373 5.2 6.2 ns µC Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using