AOW20C60

AOW20C60 600V,20A N-Channel MOSFET General Description Product Summary The AOW20C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700 IDM 145A RDS(ON),max < 0.25Ω Qg,typ 52nC Eoss @ 400V 8.5µJ 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View G D D S S D G G S AOW20C60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C ID AOW20C60 600 Units V ±30 V 20 11 A Pulsed Drain Current C IDM Avalanche Current C,J IAR 20 A Repetitive avalanche energy C,J EAR 200 mJ 1470 100 20 463 mJ V/ns 3.7 -55 to 150 W/ oC °C 300 °C AOW20C60 65 0.5 0.27 Units °C/W °C/W °C/W Single pulsed avalanche energy G EAS MOSFET dv/dt ruggedness dv/dt Peak diode recovery dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0 July 2013 www.aosmd.com 145 W Page 1 of 6 AOW20C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.55 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A gFS Forward Transconductance VDS=40V, ID=10A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 ±100 3 µA 4 5 nΑ V 0.21 0.25 Ω 1 V S IS Maximum Body-Diode Continuous Current 20 A ISM Maximum Body-Diode Pulsed Current C 145 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H VGS=0V, VDS=100V, f=1MHz 3440 pF 145 pF 98 pF 185 pF VGS=0V, VDS=0 to 480V, f=1MHz Crss Effective output capacitance, time related I Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 5 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1 Ω Co(tr) SWITCHING PARAMETERS Total Gate Charge Qg Qgs Gate Source Charge Qgd 52 VGS=10V, VDS=480V, ID=20A 74 nC 22 nC Gate Drain Charge 14 nC tD(on) Turn-On DelayTime 74 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=300V, ID=20A, RG=25Ω 76 ns 100 ns 45 ns IF=20A,dI/dt=100A/µs,VDS=100V 665 Body Diode Reverse Recovery Charge IF=20A,dI/dt=100A/µs,VDS=100V 14 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using