AOW2500

AOW2500 150V N-Channel MOSFET General Description Product Summary The AOW2500 uses Trench MOSFET technology that is VDS uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 6.2mΩ switching power losses are minimized due to an RDS(ON) (at VGS=6V) < 7.3mΩ 150V 152A extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% Rg Tested TO-262 D Bottom View Top View G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Continuous Drain Current V A 440 11.5 IDSM TA=70°C ±20 107 IDM TA=25°C Units V 152 ID TC=100°C Maximum 150 A 9.0 Avalanche Current C IAS 65 A Avalanche energy L=0.3mH C TC=25°C EAS 634 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev.1.0: July 2013 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 187.5 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 375 PD -55 to 175 Typ 12 48 0.26 www.aosmd.com °C Max 15 60 0.4 Units °C/W °C/W °C/W Page 1 of 6 AOW2500 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Conditions Min ID=250µA, VGS=0V 150 Zero Gate Voltage Drain Current Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250µA Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 2.3 TJ=125°C Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd tD(on) nA 3.5 V 5.1 6.2 9.9 12 5.6 7.3 mΩ 1 V 152 A VGS=10V, VDS=75V, ID=20A 1 mΩ S 6460 pF 586 pF 22 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs ±100 70 VGS=0V, VDS=75V, f=1MHz Output Capacitance 2.8 0.66 DYNAMIC PARAMETERS Input Capacitance Ciss Coss µA 5 VGS=10V, ID=20A TO262 VGS=6V, ID=20A TO262 Units 1 TJ=55°C IGSS Max V VDS=150V, VGS=0V VGS(th) RDS(ON) Typ pF 2.1 3.2 Ω 97 136 nC 22.5 nC Gate Drain Charge 17 nC Turn-On DelayTime 18.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs VGS=10V, VDS=75V, RL=3.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 20 ns 67.5 ns 14 ns 90 ns nC 1090 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=0.4°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: July 2013 www.aosmd.com Page 4 of 6 AOW2500 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 350 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C TA=125°C 300 250 200 150 100 50 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 1000 200 150 100 Power (W) Current rating ID(A) TA=25°C 100 17 5 2 10 10 50 0 0 1 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 18100 0.1 1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 0.001 0.01 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: July 2013 www.aosmd.com Page 5 of 6 AOW2500 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: July 2013 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6