AOW2502
150V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
150V
106A
RDS(ON) (at VGS=10V)
< 10.7mΩ
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO-262
D
Bottom View
Top View
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOW2502
TO-262
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy
L=0.3mH
VDS Spike
C
10µs
TC=25°C
Power Dissipation
B
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev.1.0: December 2014
IAS
40
A
EAS
240
mJ
VSPIKE
180
V
277
Steady-State
Steady-State
W
111
6.2
W
4.0
TJ, TSTG
Symbol
t ≤ 10s
A
13
PDSM
TA=70°C
A
16
PD
TC=100°C
V
250
IDSM
TA=70°C
±20
67
IDM
TA=25°C
Continuous Drain
Current
Units
V
106
ID
TC=100°C
Maximum
150
RθJA
RθJC
-55 to 150
Typ
15
55
0.35
www.aosmd.com
°C
Max
20
65
0.45
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
150
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
3.5
TJ=125°C
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
nA
5.1
V
8.9
10.7
17.3
21
50
VGS=0V, VDS=75V, f=1MHz
f=1MHz
VGS=10V, VDS=75V, ID=20A
1
mΩ
S
1
V
106
A
3010
pF
345
pF
14
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
Qgs
±100
4.3
0.7
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
µA
5
VGS=10V, ID=20A
VSD
Units
1
TJ=55°C
TO-220
VDS=5V, ID=20A
Max
V
VDS=150V, VGS=0V
IDSS
RDS(ON)
Typ
pF
2
3
Ω
43
60
nC
18
nC
Gate Drain Charge
10
nC
tD(on)
Turn-On DelayTime
19
ns
tr
Turn-On Rise Time
24
ns
tD(off)
Turn-Off DelayTime
30
ns
tf
trr
Turn-Off Fall Time
8.5
ns
IF=20A, dI/dt=500A/µs
75
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
880
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=75V, RL=3.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using or equal to 10V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
ZθJC Normalized Transient
Thermal Resistance
Coss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: December 2014
www.aosmd.com
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
120
Current rating ID(A)
Power Dissipation (W)
100
300
200
100
80
60
40
20
0
0
0
25
50
75
100
125
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
150
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
1000
TA=25°C
Power (W)
100
10
1
0.001
0.01
0.1
1
10
100
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: December 2014
www.aosmd.com
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: December 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6
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