AOW2918

AOW2918 100V N-Channel MOSFET General Description Product Summary The AOW2918 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 100V 90A RDS(ON) (at VGS=10V) < 7mΩ 100% UIS Tested 100% Rg Tested TO-262 D Bottom View Top View G G D S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current V A 260 13 IDSM TA=70°C ±20 70 IDM TA=25°C Units V 90 ID TC=100°C C Maximum 100 A 10 Avalanche Current C IAS, IAR 35 A Avalanche energy L=0.1mH C EAS, EAR 61 mJ VSPIKE 120 V VDS Spike I 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C PD TA=25°C Rev.1.0 : Aug 2016 2.1 Steady-State Steady-State RθJA RθJC W 1.33 TJ, TSTG Symbol t ≤ 10s W 133 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 267 -55 to 175 Typ 12 50 0.45 °C Max 15 60 0.56 Units °C/W °C/W °C/W Page 1 of 6 AOW2918 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.7 ID(ON) On state drain current VGS=10V, VDS=5V 260 TJ=55°C VGS=10V, ID=20A 100 nA 3.3 3.9 V 5.6 7 9 12 A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 34 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge mΩ S 1 V 90 A 2580 3430 pF 1530 2035 pF 37 63 pF Ω 1.5 38 VGS=10V, VDS=50V, ID=20A µA 5 RDS(ON) Output Capacitance Units V VDS=100V, VGS=0V IDSS Coss Max 53 nC Qgs Gate Source Charge Qgd Gate Drain Charge 12 tD(on) Turn-On DelayTime 17 38 ns tr Turn-On Rise Time 24 53 ns VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 12 nC nC 30 66 ns 24 53 ns 46 65 230 320 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using