AOW292

AOW292 100V N-Channel MOSFET General Description Product Summary • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications VDS Applications ID (at VGS=10V) 100V 105A RDS(ON) (at VGS=10V) < 4.1mΩ RDS(ON) (at VGS=6V) < 4.9mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO-262 D Bottom View Top View D D G S GD SD G S Orderable Part Number Package Type Form Minimum Order Quantity AOW292 TO-262 Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C TA=25°C Continuous Drain Avalanche Current Avalanche energy VDS Spike I Power Dissipation B L=0.1mH C 10μs TC=25°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.2.0: August 2020 IAS 60 A EAS 180 mJ VSPIKE 120 V 300 AD t ≤ 10s Steady-State Steady-State W 150 1.9 W 1.2 TJ, TSTG Symbol A A 11.5 PDSM TA=70°C A 14.5 PD TC=100°C V 420 IDSM C ±20 105 IDM TA=70°C Current Units V 105 ID TC=100°C Maximum 100 RqJA RqJC -55 to 175 Typ 15 55 0.35 www.aosmd.com °C Max 20 65 0.5 Units °C/W °C/W °C/W Page 1 of 6 AOW292 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250mA 1 TJ=55°C 2.3 ±100 nA 2.8 3.4 V 3.3 4.1 5.4 6.7 4.9 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A 3.8 gFS Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125°C 0.68 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd VGS=10V, VDS=50V, ID=20A μA 5 VGS=10V, ID=20A Coss Units V VDS=100V, VGS=0V IDSS Max 0.4 mΩ mΩ S 1 V 105 A 6775 pF 557 pF 32 pF 0.8 1.2 Ω 90 126 nC 24 nC Gate Drain Charge 13.5 nC tD(on) Turn-On DelayTime 20 ns tr Turn-On Rise Time 11.5 ns tD(off) Turn-Off DelayTime 48 ns tf trr Turn-Off Fall Time 10 ns IF=20A, dI/dt=500A/ms 50 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 380 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=50V, RL=2.5W, RGEN=3W A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZqJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZqJC.RqJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJC=0.5°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.2.0: August 2020 www.aosmd.com Page 4 of 6 AOW292 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C TA=100°C 100 TA=150°C TA=125°C 250 200 150 100 50 10 0 1 10 100 1000 0 25 Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 120 10000 TA=25°C 100 Power (W) Current rating ID(A) 1000 80 60 40 100 10 20 0 0 25 50 75 100 125 150 175 1 1E-05 ZqJA Normalized Transient Thermal Resistance TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=65°C/W 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.2.0: August 2020 www.aosmd.com Page 5 of 6 AOW292 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: August 2020 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6