AOW298

AOW298 100V N-Channel MOSFET General Description Product Summary The AOW298 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 100V 58A RDS(ON) (at VGS=10V) < 14.5mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View D Bottom View G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current TA=25°C ±20 V A 41 IDM 130 9 IDSM TA=70°C Units V 58 ID TC=100°C C Maximum 100 A 7 Avalanche Current C IAS, IAR 20 A Avalanche energy L=0.1mH C EAS, EAR 20 mJ VSPIKE 120 V VDS Spike I 10µs TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: August 2016 2.1 Steady-State Steady-State RθJA RθJC W 1.33 TJ, TSTG Symbol t ≤ 10s W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 100 -55 to 175 Typ 12 50 1.2 www.aosmd.com °C Max 15 60 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOW298 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 100 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS，ID=250µA 2.7 VGS=10V, VDS=5V 130 VGS=10V, ID=20A nA 4.1 V 12 14.5 19 24 A gFS Forward Transconductance VDS=5V, ID=20A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=50V, ID=20A µA ±100 Static Drain-Source On-Resistance TJ=125°C Units 3.3 RDS(ON) Coss Max V VDS=100V, VGS=0V IGSS ID(ON) Typ mΩ S 1 V 70 A 1250 1670 pF 727 970 pF 25 43 pF 2 3 Ω 19 27 nC 5.5 nC 6 nC 7.5 ns 14 ns 15 ns 14 ns IF=20A, dI/dt=500A/µs 39 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 140 ns nC VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using