AOW29S50
500V 29A α MOS
TM
Power Transistor
General Description
Product Summary
The AOW29S50 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
600V
IDM
120A
RDS(ON),max
0.15Ω
Qg,typ
26.6nC
Eoss @ 400V
6.3µJ
100% UIS Tested
100% Rg Tested
TO-262
D
Bottom View
Top View
G
G
D
S
S
D
G
S
AOW29S50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOW29S50
500
Units
V
±30
V
29
ID
18
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
6
A
Repetitive avalanche energy C
EAR
70
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
608
mJ
120
PD
dv/dt
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
Maximum Case-to-sink A
Maximum Junction-to-Case
Rev 0: April 2012
RθCS
RθJC
www.aosmd.com
357
W
2.9
100
20
-55 to 150
W/ oC
300
°C
AOW29S50
Units
V/ns
°C
65
°C/W
0.5
0.35
°C/W
°C/W
Page 1 of 6
AOW29S50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
500
-
-
ID=250µA, VGS=0V, TJ=150°C
550
600
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
-
-
1
VDS=400V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.6
3.3
3.9
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=14.5A, TJ=25°C
-
0.13
0.15
Ω
VGS=10V, ID=14.5A, TJ=150°C
-
0.34
0.4
Ω
IS=14.5A,VGS=0V, TJ=25°C
-
0.85
-
V
Maximum Body-Diode Continuous Current
-
-
29
A
Maximum Body-Diode Pulsed Current
-
-
120
A
-
1312
-
pF
-
88
-
pF
-
78
-
pF
-
227
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.5
-
pF
VGS=0V, VDS=0V, f=1MHz
-
4.8
-
Ω
-
26.6
-
nC
-
6.2
-
nC
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 400V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=400V, ID=14.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
9.2
-
nC
tD(on)
Turn-On DelayTime
-
28
-
ns
tr
Turn-On Rise Time
-
39
-
ns
tD(off)
Turn-Off DelayTime
-
103
-
ns
tf
trr
Turn-Off Fall Time
-
40
-
ns
VGS=10V, VDS=400V, ID=14.5A,
RG=25Ω
IF=14.5A,dI/dt=100A/µs,VDS=400V
-
387
-
ns
IF=14.5A,dI/dt=100A/µs,VDS=400V
-
29.6
-
Body Diode Reverse Recovery Charge IF=14.5A,dI/dt=100A/µs,VDS=400V
-
7.3
-
A
µC
Irm
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
Qrr
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
