AOWF11C60

AOWF11C60 600V,11A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 700V IDM 80A RDS(ON),max < 0.44Ω Qg,typ 30nC Eoss @ 400V 5.1µJ Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested TO-262F Bottom View Top View G D S D S D G G S AOWF11C60 Orderable Part Number Package Type Form Minimum Order Quantity AOWF11C60 TO-262F Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID Max 600 Units V ±30 V 11* 9* A IDM 80 Avalanche Current C,J IAR 11 A Repetitive avalanche energy C,J EAR 60 mJ 750 100 20 28 0.2 -55 to 150 mJ W W/°C °C 300 °C Max 65 4.5 Units °C/W °C/W Single pulsed avalanche energy G EAS MOSFET dv/dt ruggedness dv/dt Peak diode recovery dv/dt TC=25°C PD Power Dissipation B Derate above 25°C Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.2.0: Auguest 2014 www.aosmd.com V/ns Page 1 of 6 AOWF11C60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 700 V ID=250µA, VGS=0V 0.55 V/ oC VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A gFS Forward Transconductance VDS=40V, ID=5.5A 12 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 ±100 3 µA 4 5 nΑ V 0.36 0.44 Ω 1 V S IS Maximum Body-Diode Continuous Current 11 A ISM Maximum Body-Diode Pulsed Current C 80 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H VGS=0V, VDS=100V, f=1MHz 2000 pF 84 pF 60 pF 107 pF VGS=0V, VDS=0 to 480V, f=1MHz Crss Effective output capacitance, time related I Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz 2.8 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.5 Ω Co(tr) SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr 30 VGS=10V, VDS=480V, ID=11A 42 nC 14 nC 4 nC 50 ns VGS=10V, VDS=300V, ID=11A, RG=25Ω 50 ns 70 ns 32 ns IF=11A,dI/dt=100A/µs,VDS=100V 485 Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 7.2 ns µC Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using