AOWF11N70

AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 800V@150℃ 11A RDS(ON) (at VGS=10V) < 0.87Ω 100% UIS Tested 100% Rg Tested TO-262F Top View D Bottom View S G D S D G G S AOWF11N70 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOWF11N70 700 Units V ±30 V 11* 7.2* A Pulsed Drain Current C IDM Avalanche Current C IAR 4 A Repetitive avalanche energy C EAR 120 mJ 240 5 28 mJ V/ns W 0.22 -55 to 150 W/ oC °C 300 °C AOWF11N70 65 4.5 Units °C/W °C/W Single pulsed avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: Dec 2011 www.aosmd.com 43 Page 1 of 5 AOWF11N70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 800 V ID=250µA, VGS=0V 0.8 V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A gFS Forward Transconductance VDS=40V, ID=5.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.8 4.5 nΑ V 0.72 0.87 Ω 1 V Maximum Body-Diode Continuous Current 11 A Maximum Body-Diode Pulsed Current 43 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 3 17 S 0.72 1430 1793 2150 pF 116 146 190 pF 8.4 10.5 15 pF 1.8 3.6 5.4 Ω 30 37.5 45 nC VGS=10V, VDS=560V, ID=11A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=11A,dI/dt=100A/µs,VDS=100V 320 400 480 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 7.2 9 11 Body Diode Reverse Recovery Time VGS=10V, VDS=350V, ID=11A, RG=25Ω 10 nC 15 nC 42 ns 74 ns 103 ns 62 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using