AOW11S65/AOWF11S65
650V 11A α MOS TM Power Transistor
General Description
Product Summary
The AOW11S65 & AOWF11S65 have been fabricated
using the advanced αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
750V
IDM
45A
RDS(ON),max
0.399Ω
Qg,typ
13.2nC
Eoss @ 400V
2.9µJ
100% UIS Tested
100% Rg Tested
TO-262
TO-262F
D
Top View
Bottom View
Top View
Bottom View
G
G
D
S
S
D
G
S
G
AOW11S65
D
S
D
G
S
AOWF11S65
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOW11S65
Symbol
Drain-Source Voltage
VDS
650
Gate-Source Voltage
±30
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOWF11S65
11
ID
IDM
V
11*
8
Pulsed Drain Current C
Units
V
8*
A
45
Avalanche Current C
IAR
2
A
Repetitive avalanche energy C
EAR
60
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
120
PD
W
1.6
0.22
W/ oC
100
20
-55 to 150
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
V/ns
°C
300
°C
AOW11S65
AOWF11S65
Units
65
65
°C/W
0.5
0.63
-4.5
°C/W
°C/W
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev0: Dec 2011
28
dv/dt
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
mJ
198
www.aosmd.com
Page 1 of 6
AOW11S65/AOWF11S65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
650
-
-
ID=250µA, VGS=0V, TJ=150°C
700
750
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=650V, VGS=0V
-
-
1
VDS=520V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.6
3.3
4
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VSD
Diode Forward Voltage
IS
ISM
VGS=10V, ID=5.5A, TJ=25°C
-
0.35
0.399
Ω
VGS=10V, ID=5.5A, TJ=150°C
-
0.98
1.11
Ω
IS=5.5A,VGS=0V, TJ=25°C
-
0.82
-
V
Maximum Body-Diode Continuous Current
-
-
11
A
Maximum Body-Diode Pulsed CurrentC
-
-
45
A
-
646
-
pF
-
42
-
pF
-
33
-
pF
-
117
-
pF
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
-
1.1
-
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
-
18
-
Ω
-
13.2
-
nC
-
3.2
-
nC
Co(tr)
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=10V, VDS=480V, ID=5.5A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
4.3
-
nC
tD(on)
Turn-On DelayTime
-
25
-
ns
tr
Turn-On Rise Time
-
20
-
ns
tD(off)
Turn-Off DelayTime
-
77
-
ns
tf
trr
Turn-Off Fall Time
-
19
-
ns
VGS=10V, VDS=400V, ID=5.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=5.5A,dI/dt=100A/µs,VDS=400V
-
278
-
ns
Irm
IF=5.5A,dI/dt=100A/µs,VDS=400V
-
22
-
Qrr
Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V
-
4.2
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
