AOWF12N65

AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 750V@150℃ 12A RDS(ON) (at VGS=10V) < 0.72Ω 100% UIS Tested 100% Rg Tested TO-262 Top View TO-262F Bottom View D Top View S G AOW12N65 S D G D Bottom View S S D G AOWF12N65 D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOW12N65 AOWF12N65 Symbol Drain-Source Voltage VDS 650 Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ±30 V 12 ID Units V 12* 7.7 7.7* A Pulsed Drain Current C IDM Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 375 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 750 5 mJ V/ns W 48 PD 28 0.22 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOW12N65 65 AOWF12N65 65 Units °C/W 0.5 0.45 -4.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev1:Jul 2011 278 2.2 www.aosmd.com Page 1 of 6 AOW12N65/AOWF12N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 750 V ID=250µA, VGS=0V 0.72 V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 µA ±100 3 3.9 4.5 nΑ V 0.72 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A 0.57 gFS Forward Transconductance VDS=40V, ID=6A 17 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 12 A ISM Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge V 1792 2150 pF 105 152 198 pF 6.5 11.5 18 pF VGS=0V, VDS=0V, f=1MHz 1.7 3.5 5.3 Ω 32 39.8 48 nC VGS=10V, VDS=520V, ID=12A 7.5 9.2 11 nC 8 16.8 25 nC Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time 1 1430 VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs S 0.71 36 VGS=10V, VDS=325V, ID=12A, RG=25Ω ns 77 ns 120 ns 63 IF=12A,dI/dt=100A/µs,VDS=100V ns 300 375 450 6 7.5 9 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using