AOWF14N50

AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary The AOW14N50 & AOWF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 14A RDS(ON) (at VGS=10V) < 0.38Ω 100% UIS Tested 100% Rg Tested TO-262 TO-262F D Top View Bottom View Top View Bottom View G G D S S D G S G D Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Avalanche Current D TC=100°C C AOWF14N50 500 ±30 14 ID Units V V 14* 11 11* IDM C S AOW14N50 VGS TC=25°C Pulsed Drain Current S G A 56 IAR 6 A EAR 540 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25 oC EAS dv/dt 1080 5 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG Repetitive avalanche energy C PD 28 0.22 -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOW14N50 65 AOWF14N50 65 Units °C/W 0.5 0.45 -4.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Prelim: July 2010 278 2.2 www.aosmd.com Page 1 of 6 AOW14N50/AOWF14N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.5 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ±100 3.3 µA 4.2 4.5 nΑ V 0.38 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A 0.29 gFS Forward Transconductance VDS=40V, ID=7A 20 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 14 A ISM Maximum Body-Diode Pulsed Current 56 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 1531 1914 2297 pF 134 191 250 pF 9.5 16 23 pF VGS=0V, VDS=0V, f=1MHz 1.75 3.5 5.3 Ω 34 42.8 51 nC VGS=10V, VDS=400V, ID=14A 7.4 9.3 11 nC 10 20.3 31 nC VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr S 0.71 44 53 ns 84 101 ns 92 110 ns 50 60 ns IF=14A,dI/dt=100A/µs,VDS=100V 289 347 Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V 4.93 6 ns µC VGS=10V, VDS=250V, ID=14A, RG=25Ω A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using