AOWF160A60

AOWF160A60/AOW160A60 600V, a MOS5 General Description TM N-Channel Power Transistor Product Summary TM • Proprietary αMOS5 technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 700V IDM 96A RDS(ON),max < 0.16Ω Qg,typ 46nC Eoss @ 400V 4.9mJ Applications 100% UIS Tested 100% Rg Tested • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology TO-262F Top View G D TO-262 Bottom View D S Top View S D Bottom View G G AOWF160A60 D S S D G G S AOW160A60 Orderable Part Number Package Type Form Minimum Order Quantity AOW160A60 AOWF160A60 TO262 TO-262F Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current C 600 Units V VGS ±20 V VGS ±30 C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D ID V 24* 15 15* A 96 IAR 6 A EAR 18 mJ EAS 172 100 20 mJ dv/dt V/ns -55 to 150 W W/°C °C 300 °C 250 2 PD TJ, TSTG 27.7 0.22 TL Symbol RqJA AOW160A60 AOWF160A60 Units 65 65 -4.5 °C/W RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature. Rev.3.0: September 2020 AOWF160A60 24 IDM Avalanche Current C Repetitive avalanche energy AOW160A60 www.aosmd.com 0.5 0.5 °C/W °C/W Page 1 of 6 AOWF160A60/AOW160A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V VDS=5V, ID=250mA 3 RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VGS=10V, ID=12A 0.14 gFS Forward Transconductance VDS=10V, ID=12A VSD Diode Forward Voltage IS=12A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time I related Reverse Transfer Capacitance Rg Gate resistance Co(tr) ID=250μA, VGS=0V, TJ=150°C 700 ID=250μA, VGS=0V 0.53 V o V/ C VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 ±100 nA 0.16 Ω S 1.2 V 24 A 96 A V 20 0.87 mA 2340 pF 62 pF 56 pF 233 pF VGS=0V, VDS=100V, f=1MHz 1.3 pF f=1MHz 5.4 Ω 46 nC 17 nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=12A Qgs Gate Source Charge Qgd Gate Drain Charge 14 nC tD(on) Turn-On DelayTime 34 ns tr Turn-On Rise Time 29 ns tD(off) Turn-Off DelayTime 63 ns tf trr Turn-Off Fall Time 19 ns Body Diode Reverse Recovery Time 387 ns Irm Peak Reverse Recovery Current 30 Qrr Body Diode Reverse Recovery Charge A mC VGS=10V, VDS=400V, ID=12A, RG=5W IF=12A, dI/dt=100A/ms, VDS=400V 7.3 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using