AOWF190A60C

AOWF190A60C/AOW190A60C 600V, a MOS5 TM N-Channel Power Transistor General Description Product Summary • Proprietary aMOS5 technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max 700V IDM 80A RDS(ON),max < 0.19Ω Qg,typ 34nC Eoss @ 400V 4.3mJ Applications 100% UIS Tested 100% Rg Tested TM • SMPS with PFC, Flyback and LLC topologies • Silver ATX,adapter,TV,lighting,Telecom TO-262F Top View TO-262 Bottom View G D S Top View S D G G AOWF190A60C D Bottom View D S S D G G S AOW190A60C Orderable Part Number Package Type Form Minimum Order Quantity AOWF190A60C AOW190A60C TO-262F TO-262 Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C AOWF190A60C 600 AOW190A60C Units V VGS ±20 V VGS ±30 V 20* ID 20 12* 12 IDM A 80 Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 12.5 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 410 100 20 mJ Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D dv/dt -55 to 150 W W/°C °C 300 °C 27 0.22 PD TJ, TSTG TL Symbol RqJA 208 1.66 AOWF190A60C AOW190A60C Units 65 65 °C/W -4.5 0.5 0.6 °C/W °C/W RqCS Maximum Case-to-sink A Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature Rev.4.0: September 2020 V/ns www.aosmd.com Page 1 of 6 AOWF190A60C/AOW190A60C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V VDS=5V, ID=250mA RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VDS=10V, ID=10A VSD Diode Forward Voltage IS=10A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) 700 ID=250μA, VGS=0V 0.59 V o V/ C VDS=600V, VGS=0V 1 VDS=480V, TJ=125°C 10 VGS=10V, ID=7.6A ±100 3.2 VGS=0V, VDS=100V, f=1MHz mA nA 4 4.6 V 0.17 0.19 Ω 16 0.85 C DYNAMIC PARAMETERS Ciss Input Capacitance Coss ID=250μA, VGS=0V, TJ=150°C S 1.2 V 20 A 80 A 1935 pF 55 pF 49 pF 213 pF 1.25 pF 5 Ω 34 nC 15 nC VGS=0V, VDS=0 to 480V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=480V, ID=10A Qgs Gate Source Charge Qgd Gate Drain Charge 8.5 nC tD(on) Turn-On DelayTime 80 ns tr Turn-On Rise Time 70 ns tD(off) Turn-Off DelayTime 80 ns tf trr Turn-Off Fall Time 20 ns Body Diode Reverse Recovery Time 341 ns Irm Peak Reverse Recovery Current 28 Qrr Body Diode Reverse Recovery Charge A mC VGS=10V, VDS=400V, ID=10A, RG=25W IF=10A, dI/dt=100A/ms, VDS=400V 6.8 A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using