AOWF296

AOW296/AOWF296 100V N-Channel AlphaSGT TM General Description Product Summary • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant VDS Applications 100V RDS(ON) (at VGS=10V) < 9.7mΩ RDS(ON) (at VGS=6V) < 12.2mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO-262 Top View TO-262F Top View Bottom View D Bottom View D AOW296 G D S S D G G D S S D G G S AOWF296 Orderable Part Number Package Type Form Minimum Order Quantity AOW296 AOWF296 TO-262 TO-262F Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Pulsed Drain Current ID TC=100°C C IDM TA=25°C IDSM TA=70°C Avalanche Current C Avalanche energy L=0.1mH VDS Spike I 10µs TC=25°C Power Dissipation B C ±20 V 46.5 23.5 180 150 18 21 14.5 16.5 Junction and Storage Temperature Range Steady-State Steady-State A 40 A 80 mJ 120 RθJA RθJC V 104 26 41.5 10.5 6.2 8.3 4.0 5.3 TJ, TSTG Symbol t ≤ 10s A EAS PDSM TA=70°C Rev.1.0: February 2017 37 IAS PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 70 VSPIKE TA=25°C Power Dissipation A Units V VGS TC=25°C Continuous Drain Current G(AOW) Continuous Drain Current AOW296 (Max) AOWF296 (Max) 100 -55 to 150 AOW296 (Max) 20 65 1.2 www.aosmd.com AOWF296 (Max) 15 55 4.8 W W °C Units °C/W °C/W °C/W Page 1 of 8 AOW296/AOWF296 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C VGS=10V, ID=20A ±100 nA 2.9 3.4 V 7.9 9.7 13.6 16.6 12.2 RDS(ON) Static Drain-Source On-Resistance VGS=6V, ID=20A 9.4 gFS Forward Transconductance VDS=5V, ID=20A 62 VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G IS Maximum Body-Diode Continuous Current TJ=125°C 0.7 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge S 1 V A AOWF296 30 A VGS=0V, VDS=50V, f=1MHz 2785 pF 238 pF 12 f=1MHz VGS=10V, VDS=50V, ID=20A 0.25 pF 0.55 0.85 37 52 Ω nC 11.5 nC Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 210 Body Diode Reverse Recovery Time mΩ 70 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs mΩ AOW296 DYNAMIC PARAMETERS Input Capacitance Ciss Coss µA 5 2.3 Units V VDS=100V, VGS=0V IDSS Max 5 nC VGS=0V, VDS=50V 37 nC 13 ns VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 8.5 ns 29 ns 4 ns 35 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) - AOW296 10 80 TJ(Max)=150°C TC=25°C 400 Power (W) ID (Amps) RDS(ON) limited 1.0 0.1 60 500 100.0 10.0 40 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 ZθJC Normalized Transient Thermal Resistance Coss Crss D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.2°C/W 1 PDM Single Pulse 0.1 Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) - AOW296 Rev.1.0: February 2017 www.aosmd.com Page 4 of 8 AOW296/AOWF296 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 80 100 Power Dissipation (W) 60 Current rating ID (A) 80 60 40 20 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note F) - AOW296 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) - AOW296 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) - AOW296 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=65°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) - AOW296 Rev.1.0: February 2017 www.aosmd.com Page 5 of 8 AOW296/AOWF296 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000.0 500 10µs 10µs RDS(ON) limited 400 100µs Power (W) ID (Amps) 100.0 10.0 TJ(Max)=150°C TC=25°C 1ms 10ms 1.0 0.1 TJ(Max)=150°C TC=25°C 0.0 0.01 0.1 300 200 DC 100 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 VGS> or equal to 6V ZθJC Normalized Transient Thermal Resistance 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) - AOWF296 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) - AOWF296 10 0.01 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.8°C/W 1 0.1 PDM Single Pulse Ton 0.01 1E-05 T 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) - AOWF296 Rev.1.0: February 2017 www.aosmd.com Page 6 of 8 AOW296/AOWF296 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 50 Power Dissipation (W) 40 Current rating ID (A) 20 10 30 20 10 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note F) - AOWF296 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note F) - AOWF296 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZθJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) - AOWF296 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) - AOWF296 Rev.1.0: February 2017 www.aosmd.com Page 7 of 8 AOW296/AOWF296 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: February 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 8 of 8