AOWF8N50

AOWF8N50 500V, 8A N-Channel MOSFET General Description Product Summary The AOWF8N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 8A RDS(ON) (at VGS=10V) < 0.85Ω 100% UIS Tested 100% Rg Tested TO-262F Top View Bottom View D G D S S D G G S AOWF8N50 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID AOWF8N50 500 Units V ±30 V 8* 6* A IDM 30 Avalanche Current C IAR 3.2 A Repetitive avalanche energy C EAR 154 mJ 307 5 27.8 mJ V/ns W 0.22 -55 to 150 W/ oC °C 300 °C AOWF8N50 65 4.5 Units °C/W °C/W Single plused avalanche energy G EAS Peak diode recovery dv/dt dv/dt TC=25°C PD Power Dissipation B Derate above 25oC TJ, TSTG Junction and Storage Temperature Range Maximum lead temperature for soldering TL purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev0: Dec 2011 www.aosmd.com Page 1 of 5 AOWF8N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 ID=250µA, VGS=0V V V/ oC 0.56 VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A gFS Forward Transconductance VDS=40V, ID=4A VSD Diode Forward Voltage IS=1A,VGS=0V ±100 3.4 µA 4 4.5 nΑ V 0.63 0.85 Ω 1 V 10 S 0.73 IS Maximum Body-Diode Continuous Current 8 A ISM Maximum Body-Diode Pulsed Current 30 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=400V, ID=8A 694 868 1042 pF 65 93 121 pF 4.5 7.8 11 pF 2 4 6 Ω 18 23.6 28 nC 4 5.2 6.2 nC 5.2 10.6 16 nC VGS=10V, VDS=250V, ID=8A, RG=25Ω 19.5 ns 47 ns 51.5 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V 160 206 247 Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 1.7 2.1 2.6 38.5 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using