AOY2N60

AOY2N60 600V,2A N-Channel MOSFET General Description Product Summary • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) Applications 100% UIS Tested 100% Rg Tested 700V 2A < 4.7W • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO251B D Bottom View Top View D G D G G S S D S AOY2N60 Orderable Part Number Package Type Form Minimum Order Quantity AOY2N60 TO-251B Tube 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain ID TC=100°C CurrentB Pulsed Drain Current C Maximum 600 ±30 2 1.4 Units V V A IDM 6 Avalanche Current C,I IAR 4.6 A Repetitive avalanche energy C,I EAR 10.6 mJ 97 5 57 mJ V/ns W 0.45 -50 to 150 W/ oC °C 300 °C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C H Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev.1.1: February 2022 A,G EAS dv/dt PD TJ, TSTG TL Symbol RqJA RqCS RqJC Typical 40 1.8 www.aosmd.com Maximum 50 0.5 2.2 Units °C/W °C/W °C/W Page 1 of 6 AOY2N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Conditions Min Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C 600 BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current C BVDSS RDS(ON) gFS VSD IS ISM DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VDS=600V, VGS=0V VDS=480V, TJ=125°C VDS=0V, VGS=±30V VDS=5V, ID=250mA VGS=10V, ID=1A VDS=40V, ID=1A IS=1A,VGS=0V VGS=0V, VDS=25V, f=1MHz f=1MHz VGS=10V, VDS=480V, ID=2A VGS=10V, VDS=300V, ID=2A, RG=25W IF=2A,dI/dt=100A/ms,VDS=100V IF=2A,dI/dt=100A/ms,VDS=100V Typ Max Units 700 V o 0.7 3.4 4 3.9 2.8 0.79 V/ C 1 10 ±100 4.5 4.7 1 2 6 295 30 2.3 3.2 6.5 1.5 1.8 16 11 28 14 268 1.6 mA nA V W S V A A pF pF pF W 11 nC nC nC ns ns ns ns ns mC A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using