AOY66923

AOY66923 100V N-Channel AlphaSGT TM General Description Product Summary • Trench Power MOSFET - AlphaSGT technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications 100% UIS Tested 100% Rg Tested TM 100V 58A < 11mΩ < 15mΩ • High Frequency Switching and Synchronous Rectification TO-251B (IPAK short lead) D Bottom View Top View D G G D S G S S D Orderable Part Number Package Type Form Minimum Order Quantity AOY66923 TO-251B Tube 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Symbol VDS VGS TC=25°C TC=100°C ID Pulsed Drain Current C TA=25°C Continuous Drain TA=70°C Current IDM Power Dissipation B L=0.1mH TC=25°C TC=100°C TA=25°C TA=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.2.1: February 2022 AD t ≤ 10s Steady-State Steady-State A 30 A EAS 45 73 29 6.2 4 -55 to 150 mJ PDSM TJ, TSTG Symbol A A IAS PD Power Dissipation A Junction and Storage Temperature Range Units V V 130 16.5 13.5 IDSM Avalanche Current C Avalanche energy Maximum 100 ±20 58 36.5 RqJA RqJC Typ 15 40 1.35 www.aosmd.com W W °C Max 20 50 1.7 Units °C/W °C/W °C/W Page 1 of 6 AOY66923 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V 100 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=4.5V, ID=20A VDS=5V, ID=20A Forward Transconductance IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Qoss Output Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A 1.6 TJ=125°C VGS=0V, VDS=50V, f=1MHz f=1MHz VGS=10V, VDS=50V, ID=20A VGS=0V, VDS=50V VGS=10V, VDS=50V, RL=2.5W, RGEN=3W IF=20A, di/dt=500A/ms IF=20A, di/dt=500A/ms 0.3 Max Units V VDS=100V, VGS=0V IDSS DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ 2.1 9.2 16 11.7 50 0.72 1725 360 7.5 0.8 25 12.5 6 3.5 30 8.5 3 23 3.5 41 156 1 5 ±100 2.6 11 19.5 15 μA nA V mΩ 1 58 mΩ S V A 1.3 pF pF pF Ω 35 18 nC nC nC nC nC ns ns ns ns ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150 °C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using