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AOZ9004BI-04

AOZ9004BI-04

  • 厂商:

    AOSMD(美国万代)

  • 封装:

  • 描述:

    AOZ9004BI-04 - Single-Cell Battery Protection IC with Integrated MOSFET - Alpha & Omega Semiconducto...

  • 数据手册
  • 价格&库存
AOZ9004BI-04 数据手册
Single-Cell Battery Protection IC with Integrated MOSFET AOZ9004B General Description The AOZ9004B is a battery protection IC with integrated dual common-drain N-channel MOSFET. The device includes accurate voltage detectors and delay circuits, and is suitable for protecting single-cell lithium-ion / lithium-polymer rechargeable battery packs from overcharge, over-discharge, and overcurrent conditions. The AOZ9004B is available in an 8-pin TSSOP package and is rated over a -40°C to +85°C ambient temperature range. Features ● ● ● ● ● ● ● Integrated common-drain N-channel MOSFET High-accuracy voltage detection circuit ◗ Overcharge detection accuracy ±25mV (+25°C), ±30mV (-5°C to +55°C) ◗ Overcharge release accuracy ±50mV ◗ Over-discharge detection accuracy ±50mV ◗ Over-discharge release accuracy ±100mV ◗ Discharge over-current detection accuracy ±15mV ◗ Load short-circuit detection accuracy ±300mV (AOZ9004BI), ±200mV (AOZ9004BI-01, 02, 03, and 04) ±20% accurate internal detection delay times (external capacitors are unnecessary) Charger connection pin withstands up to 28V Wide operating temperature range -40°C to +85°C Low current consumption ◗ 3.0µA (Typ.), 5.5µA (Max.) in operation mode at +25°C Small 8-pin TSSOP package Applications ● ● Lithium-ion rechargeable battery packs Lithium-polymer rechargeable battery packs Typical Application EB+ R1 220Ω 8 7 6 5 IC Single-Cell Lithium-Ion/ Lithium Polymer Battery C1 0.1μF VDD VM IC R2 2kΩ AOZ9004B VSS 1 IC 2 IC 3 OUTM 4 EBFigure 1. Typical Application Rev. 1.2 August 2008 www.aosmd.com Page 1 of 17 AOZ9004B Ordering Information Overcharge Detection Voltage (VCU) Overcharge Release Voltage (VCL) Overdischarge Detection Voltage (VDL) Overdischarge Release Voltage (VDU) Discharge Overcurrent Threshold (VDIOV)* Charge Overcurrent Threshold (VCIOV)* Part Number 0V Battery Charge Function Shutdown Function AOZ9004BI AOZ9004BI-01 AOZ9004BI-02 AOZ9004BI-03 AOZ9004BI-04 4.250V 4.275V 4.325V 4.280V 4.275V 4.05V 4.175V 4.075V 4.130V 4.075V 2.6V 2.3V 2.5V 2.8V 2.3V 2.9V 2.4V 2.9V 3.1V 2.3V 0.12V 0.10V 0.15V 0.15V 0.12V N/A -0.10V -0.10V -0.10V -0.10V No Yes No No Yes No Yes Yes Yes Yes * Please refer to Page 10 for calculation of charge and discharge current limit. • All AOS products are offered in packages with Pb-free plating and compliant to RoHS standards. • Parts marked as Green Products (with “L” suffix) use reduced levels of Halogens, and are also RoHS compliant. Please visit www.aosmd.com/web/quality/rohs_compliant.jsp for additional information. Table 1. Delay Time Combination(1) Overcharge Detection Delay Time (tCU) 1.2s 1.2s 143ms 1.2s 1.2s Delay Time Combination 1(2) 2(3) 3 4 5 Notes: (4) Over-discharge Detection Delay Time (tDL) 150ms 150ms 38ms 150ms 38ms Discharge Over-current Detection Delay Time (tDIOV) 9ms 9ms 18ms 18ms 9ms Charge Over-current Detection Delay Time (tCIOV) 9ms 9ms 9ms 9ms 9ms Load Short-circuiting Detection Delay Time (tSHORT) 560µs 300µs 300µs 300µs 300µs 1. The delay times can have the range specified in Table 2. Please contact our Sales department if you wish to order non-standard values and for additional information. 2. Combination 1 is the default delay time combination for AOZ9004BI-02. 3. Combination 2 is the default delay time combination for AOZ9004BI, AOZ9004BI-01, and AOZ9004BI-03. 4. Combination 5 is the default delay time combination for AOZ9004BI-04. Table 2. Delay Time Selection Range(5) Symbol tCU tDL tDIOV tCIOV tSHORT Note: 5. The values in Bold are standard values. Please contact our Sales department if you wish to order non-standard values and for additional information. Delay Time Overcharge detection delay time Over-discharge detection delay time Discharge over-current detection delay time Charge over-current detection delay time Load short-circuiting detection delay time 143ms 38ms 4.5ms 4.5ms – Selection Range 573ms 150ms 9ms 9ms 300µs 1.2s 300ms 18ms 18ms 560µs Rev. 1.2 August 2008 www.aosmd.com Page 2 of 17 AOZ9004B Pin Configuration VSS IC IC OUTM 1 2 3 4 8 7 6 5 IC VCC VM IC TSSOP-8 (Top View) Pin Description Pin Number 1 2 3 4 5 6 7 8 Pin Name VSS IC IC OUTM IC VM VDD IC Pin Function Ground. VSS is the source of the internal Discharge MOSFET N2 (Figure 1). Connect VSS directly to the cathode of lithium-ion/lithium polymer battery cell. Internally Connected Pin. This pin is for test purposes only. Always leave this pin unconnected. Internally Connected Pin. This pin is for test purposes only. Always leave this pin unconnected. Output Pin. OUTM is the source of the internal Charge MOSFET N1 (Figure 1). Connect OUTM directly to the negative terminal of the battery pack. Internally Connected Pin. This pin is for test purposes only. Always leave this pin unconnected. Over-current / Charger Detection Pin. Connect a 2kΩ resistor between VM and the negative terminal of the battery pack. Input Supply Pin. Connect a 0.1µF capacitor between VDD and VSS. Internally Connected Pin. This pin is for test purposes only. Always leave this pin unconnected. Rev. 1.2 August 2008 www.aosmd.com Page 3 of 17 AOZ9004B Block Diagram EB+ R1 220Ω VDD OverDischarge Comp Oscillator Counter/ Logic 0V Battery Charge Function Single-Cell Lithium-Ion/ Lithium Polymer Battery VDD C1 0.1μF Over-Charge Comp VSS Charger Detection Discharge Over-Current Comp RVDM Charge Over-Current Comp Short-Circuit Comp VM RVMS R2 2kΩ Battery Protection IC N2 N1 OUTM EB- AOZ9004B Dual Common-Drain MOSFET Figure 2. AOZ9004B Function Block Diagram Absolute Maximum Ratings Exceeding the Absolute Maximum ratings may damage the device. Parameter VDD to VSS VM to VDD MOSFET Gate-to-Source Voltage Continuous Drain Current(4) (RθJA = 95°C/W, TA = 25°C) (RθJA = 95°C/W, TA = 85°C) Pulsed Drain Current Storage Temperature (TS) Operating Temperature (TA) Power Dissipation (RθJA = 95°C/W, TA = 25°C) (RθJA = 95°C/W, TA = 85°C) (6) Rating -0.3V to +12V -28V to +0.3V -0.3V to +12V 5A 3A 30A -55°C to +125°C -40°C to +85°C 1.1W 0.5W Note: 6. The value of RθJA is measured with the device mounted on 1-in2 FR-4 board with 2-oz. copper, in a still air environment with TA = 25°C. The value in any given application depends on the user’s specific board design. Rev. 1.2 August 2008 www.aosmd.com Page 4 of 17 AOZ9004B Electrical Characteristics TA = 25°C unless otherwise specified. Parameters specified over TA = -40°C to +85°C are guaranteed by design only and not production tested. Symbol VCU Parameter Overcharge Detection Voltage TA = 25°C Condition Min. VCU–0.025 VCU–0.03 VCU–0.060 VCL–0.05 VCL–0.08 VCL–0.025 VCL–0.06 VDL–0.05 VDL–0.11 VDU–0.10 VDU–0.15 VDU–0.05 VDU–0.11 VDIOV–0.015 VDIOV–0.021 0.9 0.7 0.3 0.16 -0.13 -0.14 Typ. VCU VCU VCU VCL VCL VCL VCL VDL VDL VDU VDU VDU VDU VDIOV VDIOV 1.2 1.2 0.5 0.5 -0.1 -0.1 Max. VCU+0.025 VCU+0.03 VCU+0.040 VCL+0.05 VCL+0.065 VCL+0.025 VCL+0.04 VDL+0.05 VDL+0.13 VDU+0.10 VDU+0.19 VDU+0.05 VDU+0.13 VDIOV+0.015 VDIOV+0.024 1.5 1.7 0.7 0.84 -0.07 -0.06 Unit V DETECTION VOLTAGE TA = -5°C to +55°C TA = -40°C to +85°C VCL Overcharge Release Voltage VCL ≠ VCU VCL = VCU VDL VDU Over-Discharge Detection Voltage (2.0 to 3.0V, Adjustable) Over-Discharge Release Voltage (2.0 to 3.40V, Adjustable) TA = 25°C TA = -40°C to +85°C VDU ≠ VDL VDU = VDL VDIOV VSHORT Discharge Over-Current Threshold Load Short-Circuiting Detection Voltage TA = 25°C TA = -40°C to +85°C AOZ9004BI, TA = 25°C AOZ9004BI, TA = -40°C to +85°C AOZ9004BI-01/02/03/04, TA = 25°C AOZ9004BI-01/02/03/04 TA = -40°C to +85°C VCIOV Charge Over-Current Threshold AOZ9004BI-01/02/03/04, TA = 25°C AOZ9004BI-01/02/03/04 TA = -40°C to +85°C 0V BATTERY CHARGE FUNCTION V0INH 0V Battery Charge Inhibition Battery Voltage (0V battery charging function “unavailable”) 0V Battery Charge Starter Battery Voltage (0V battery charging function “available”) Operating Voltage Between VDD Pin and VSS Pin Operating Voltage Between VDD Pin and VM Pin Current Consumption During Operation Current Consumption During Over-Discharge TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C 1.2 1.7 0.5 0.3 V V TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C V V V V V V V0CHA INPUT VOLTAGE VDSOP1 VDSOP2 Internal Circuit Operating Voltage Internal Circuit Operating Voltage 1.5 1.5 8 28 V V INPUT CURRENT (No Shutdown Function) IOPE IOPED VDD = 3.5V, VVM = 0V TA = -40°C to +85°C VDD = VVM = 1.5V TA = -40°C to +85°C 1.0 0.7 0.3 0.2 3.0 3.0 2.0 2.0 5.5 6.0 3.5 3.8 µA µA Rev. 1.2 August 2008 www.aosmd.com Page 5 of 17 AOZ9004B Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Parameters specified over TA = -40°C to +85°C are guaranteed by design only and not production tested. Symbol IOPE IPDN Parameter Current Consumption During Operation Current Consumption at Shutdown Condition VDD = 3.5V, VVM = 0V TA = -40°C to +85°C VDD = VVM = 1.5V TA = -40°C to +85°C VDD = VCU Min. 1.0 0.7 Typ. 3.0 3.0 Max. 5.5 6.0 0.2 0.3 Unit µA µA INPUT CURRENT (Shutdown Function) INTEGRATED MOSFET BVDS_C Charge Control MOSFET Drain-Source Breakdown Voltage Charge Control MOSFET Leakage Current Discharge Control MOSFET Drain-Source Breakdown Voltage Discharge Control MOSFET Leakage Current Total Output Resistance (OUTM to VSS) Overcharge Detection Delay Time Over-Discharge Detection Delay Time Discharge Over-Current Detection Delay Time Charge Over-Current Detection Delay Time Load Short-Circuiting Detection Delay Time 30 V ILEAK_C BVDS_D VDD = VCU VDD = VDL 30 1 µA V ILEAK_D RSS VDD = VDL VDD = 3.5V, IOUT = 1.5A 40 1 48 µA mΩ DETECTION DELAY TIME (Combination 2 per Table 1) tCU tDL tDIOV tCIOV tSHORT TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C 0.96 0.7 120 83 7.2 5 7.2 5 240 150 0.96 0.7 30 20 7.2 5 7.2 5 240 150 1.2 1.2 150 150 9 9 9 9 300 300 1.2 1.2 38 38 9 9 9 9 300 300 1.4 2 180 255 11 15 11 15 360 540 1.4 2 46 65 11 15 11 15 360 540 µs ms ms ms s µs ms ms ms s DETECTION DEALY TIME (Combination 5 per Table 1) tCU tDL tDIOV tCIOV tSHORT Overcharge Detection Delay Time Over-Discharge Detection Delay Time Discharge Over-Current Detection Delay Time Charge Over-Current Detection Delay Time Load Short-Circuiting Detection Delay Time Rev. 1.2 August 2008 www.aosmd.com Page 6 of 17 AOZ9004B Electrical Characteristics (Continued) TA = 25°C unless otherwise specified. Parameters specified over TA = -40°C to +85°C are guaranteed by design only and not production tested. Symbol tCU tDL tDIOV tCIOV tSHORT Parameter Overcharge Detection Delay Time Over-Discharge Detection Delay Time Discharge Over-Current Detection Delay Time Charge Over-Current Detection Delay Time Load Short-Circuiting Detection Delay Time TA = 25°C Condition Min. 0.96 0.7 120 83 7.2 5 7.2 5 450 260 Typ. 1.2 1.2 150 150 9 9 9 9 560 560 Max. 1.4 2 180 255 11 15 11 15 670 940 Unit s ms ms ms µs DETECTION DEALY TIME (Combination 1 per Table 1) TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C TA = 25°C TA = -40°C to +85°C Rev. 1.2 August 2008 www.aosmd.com Page 7 of 17 AOZ9004B Typical Performance Characteristics On-Regions Characteristics 30 10V 25 4V 20 I D (A) Transfer Characteristics 20 2.5V 3V 15 I D (A) VDD =2V 01 2 3 45 15 10 10 5 5 0 0 00 .5 11 .5 22 .5 VDS (Volts) V DD (Volts) On-Resistance vs. Drain Current and Gate Voltage 70 60 50 RSS(ON) (mΩ ) On-Resistance vs. Junction Temperature 1.8 VDD =4.5V ID =6A 1.4 VDD =2.5V ID =3A 1.2 VDD =2.5V 40 30 20 10 0 0 5 10 I D (A) 15 20 VDD =4.5V Normalized On-Resistance 1.6 1 0.8 0 25 50 75 100 125 150 175 Temperature (°C) On-Resistance vs. Gate-Source Voltage 120 ID =3A 100 80 Body-Diode Characteristics 1.0E+01 125°C 1.0E+00 1.0E-01 25°C RSS(ON) (mΩ) IS (A) 60 125°C 40 25°C 20 0 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0 2 4 6 VDD (Volts) 8 10 0.2 0.4 0.6 0.8 VSD (Volts) 1.0 1.2 Rev. 1.2 August 2008 www.aosmd.com Page 8 of 17 AOZ9004B Theory of Operation Please refer to the Timing Diagrams for more information. Over-Discharge Status When the battery voltage falls below over-discharge detection voltage (VDL) for the over-discharge detectiondelay time (tDL) or longer, the IC turns off the discharging control MOSFET to stop discharging. This condition is the over-discharge status. Under the over-discharge status, the VM pin voltage is pulled up by the resistor between the VM pin and VDD pin in the IC (RVMD). When voltage difference between the VM pin and VDD pin is 1.3V (Typ.) or lower, the productions with “Shut-down Function Available” feature can enter the shut-down status to save power. At this status, the current consumption is reduced to the shut-down current consumption (IPON). The shut-down status is released when a charger is connected and the voltage difference between the VM pin and VDD pin becomes 1.3V (Typ.) or higher. When a battery in the over-discharge status is connected to a charger and provides that the VM pin voltage is lower than -0.7V (Typ.), the AOZ9004B releases the overdischarge status and turns on the discharging MOSFET when the battery voltage reaches over-discharge detection voltage (VDL) or higher. If VM pin voltage is not lower than -0.7V (Typ.), the AOZ9004B releases the overdischarge status and turns on the discharging MOSFET when the battery voltage reaches over-discharge detection voltage (VDU) or higher. Normal Status The AOZ9004B monitors the voltage between the VDD pin and VSS pin and the voltage difference between the VM pin and VSS pin to control charging and discharging. Since the device only draws a few microamperes of current during operation and the voltage drop across the low-pass filter R1 is negligible, the voltage between VDD and VSS is equal to the battery voltage. When the battery voltage is in the range between over-discharge detection voltage (VDL) and overcharge detection voltage (VCU), and the VM pin voltage is in the range between the charge over-current detection voltage (VCIOV) and discharge over-current detection voltage (VDIOV), the IC turns both the charging and discharging control FETs on. In this normal status, charging and discharging can be carried out freely. Caution: Products with “Shut-down Function Available” feature may not enable discharging when the battery is connected for the first time. Connect the charger or short VM pin to VSS can restore the normal status. Overcharge Status When the battery voltage rises higher than overcharge detection voltage (VCU) for the overcharge detection delay time (tCU) or longer in the normal status, the AOZ9004B turns off the charging control MOSFET to stop charging. This condition is the overcharge status. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin are not connected. The overcharge status is released in the following two cases: 1. When the battery voltage falls below overcharge release voltage (VCL) and VM pin voltage is higher than -0.7V (Typ.) (charger is removed), the AOZ9004B turns on the charging control MOSFET and returns to the normal status. 2. When a load is connected and battery voltage is below overcharge detection voltage (VCU), the AOZ9004B turns on the charging control MOSFET and returns to the normal status. Caution: When both charger and load are connected after overcharge detection, charging control FET still remains off and a portion of the load current may flow through body diode of charging control FET if the charger can not supply the full load current. This condition may overheat the charging control FET. Please refer to the Typical Characteristics for more information. Discharge Over-Current Status (Discharge Over-current, Load Short-circuiting) When a battery is in the normal status, and the discharge current becomes higher than specified value and the status lasts for the discharge over-current detection delay time (tDIOV), the IC turns off the discharge control MOSFET and stops discharging. This status is the discharge over-current status. In the discharge overcurrent status, the VM pin and VSS pin are shorted by the resistor between VM pin and VSS pin (RVMS) in the IC. When the load is disconnected, the VM pin returns to the VSS potential. When the impedance between the EB+ pin and EB- pin (Refer to Figure 1) increases and is equal to the impedance that enables automatic restoration and the voltage at the VM pin returns to discharge overcurrent detection voltage (VDIOV) or lower, the discharge over-current status is restored to the normal status. Even if the connected impedance is smaller than automatic restoration level, the AOZ9004B will be restored to the normal status from discharge over-current detection status when the voltage at the VM pin becomes the discharge over-current detection voltage (VDIOV) or lower by connecting the charger. The resistance (RVMD) between the VM pin and VDD pin is not connected in the discharge over-current detection status. Page 9 of 17 Rev. 1.2 August 2008 www.aosmd.com AOZ9004B When a battery is in the normal status, and the discharge current becomes abnormally higher (EB+ pin and EB- pin shorted), and thus the VM pin voltage is equal or higher than load short-circuiting detection voltage (VSHORT) for load short-circuiting detection delay time (tSHORT), the IC turns off the discharge control MOSFET and stops discharging. This status is the load shorting-circuiting status. In the load shorting-circuiting status, the VM pin and VSS pin are shorted by the resistor between VM pin and VSS pin (RVMS) in the IC. When the short-circuiting condition is released, the VM pin returns to the VSS potential. The resistance (RVMD) between the VM pin and VDD pin is not connected in the load shortingcircuiting status. Battery Charging Function “Unavailable” This function inhibits recharging when a battery that is internally short-circuited (0V battery) is connected. When the battery voltage is the 0V battery charge inhibition battery voltage (V0INH) or lower, the charging control MOSFET gate is fixed to the EB- pin voltage to inhibit charging. When the battery voltage is the 0V battery charge inhibition battery voltage (V0INH) or higher, charging can be performed. Calculation of Current Limit The charge and discharge current limit is determined by the charge and discharge over-current threshold voltages (VDIOV and VCIOV), and the total resistance of the internal MOSFET (RSS). Use the following equations to determine the maximum and minimum current limits: Charge Over-Current Status When a battery in the normal status, and the charge current is higher than the specified value and the status lasts for the charge over-current detection delay time (tCIOV), the charge control MOSFET is turned off and charging is stopped. This status is the charge over-current status. This IC will be restored to the normal status from the charge over-current status when, the voltage at the VM pin returns to charge over-current detection voltage (VCIOV) or higher by removing the charger. The charge over-current detection function does not work in the overdischarge status. The resistance (RVMD) between the VM pin and VDD pin, and the resistance (RVMS) between the VM pin and VSS pin are not connected in the charge over-current status. I DIOV _ MAX = I CIOV _ MAX = V DIOV _ MAX RSS _ MIN VCIOV _ MAX RSS _ MIN ; I DIOV _ MIN = I CIOV _ MIN = V DIOV _ MIN RSS _ MAX VCIOV _ MIN R SS _ MAX ; 0V Battery Charging Function “Available” This function is used to recharge a connected battery whose voltage is 0V due to self-discharge. When the 0V battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB+ and EB- pins by connecting a charger, the charging control MOSFET gate is fixed to the VDD pin voltage. When the voltage between the gate and source of the charging control MOSFET becomes equal to or higher than the turn-on voltage due to the charger voltage, the charging control MOSFET is turned on to start charging. At this time, the discharging control MOSFET is off and the charging current flows through the internal parasitic diode in the discharging control MOSFET. When the battery voltage becomes equal to or higher than overdischarge release voltage (VDU), the AOZ9004B enters the normal status. Rev. 1.2 August 2008 www.aosmd.com Page 10 of 17 AOZ9004B Timing Diagrams VCU Battery Voltage VCL VDU VDL Charge tCU tDL Battery Current Discharge VDD VM Pin VDIOV Voltage V SS VEB- Connect Charger Connect Load Connect Charger Mode (1) (2) (1) (3) (1) Mode: 1. Normal Mode 2. Overcharge Mode 3. Over-Discharge Mode Figure 3. Overcharge and Over-discharge Detection Timing Diagram Rev. 1.2 August 2008 www.aosmd.com Page 11 of 17 AOZ9004B Battery Voltage VCU VCL VDU VDL Charge Battery Current Discharge tDIOV tSHORT VDD VM Pin Vshort Voltage VDIOV VSS Normal Load Overcurrent Load Short Circuit Normal Load Mode (1) (4) (1) (4) (1) Mode: 1. Normal Mode 4. Discharge Over-current Mode Figure 4. Discharging Over-current Detection Timing Diagram Rev. 1.2 August 2008 www.aosmd.com Page 12 of 17 AOZ9004B Battery Voltage VCU VCL VDU VDL Charge Battery Current tCIOV Discharge tCIOV VDD VM Pin Voltage VSS VCIOV VEBConnected Charger with Charge Overcurrent Connected Charger with Charge Overcurrent (1) (5) Mode (3) (1) (5) Mode: 1. Normal Mode 3. Over-Discharge Mode 5. Charge over-current mode Figure 5. Charging Over-current Detection Timing Diagram Rev. 1.2 August 2008 www.aosmd.com Page 13 of 17 AOZ9004B Applications Information EB+ R1 220Ω 8 7 6 5 IC Single-Cell Lithium-Ion/ Lithium Polymer Battery C1 0.1μF VDD VM IC R2 2kΩ AOZ9004B VSS 1 IC 2 IC 3 OUTM 4 EBFigure 6. AOZ9004B Applications Circuit A low-pass filter formed by R1 and C1 reduces supply voltage fluctuation on the VDD pin. R1 also provides ESD protection and serves as an current-limiting resistor in the event of charger reverse connection. The supply current of AOZ9004B has to flow through R1, so a small R1 should be chosen to guarantee detection accuracy of VDD voltage. Choose a resistor value between 100Ω and 330Ω for R1. Choose the value of C1 to be 0.022µF or higher. Both R1 and C1 should be placed as close as possible to AOZ9004B to minimize parasitic effect. R2 provides ESD protection and serve as a currentlimiting resistor in the event of charger reverse connection. A large value resistor should be chosen to limit power consumption during this condition. However, an extremely large value of R2, of course, will cause inaccuracy of VM pin voltage detection. Choose a resistor value between 300Ω and 4kΩ for R2. Table 3. External Components Selection Range Designator R1 C1 R2 Purpose Reduce supply voltage fluctuation, provide ESD protection, and limit current when a charger is reversely connected Reduce supply voltage fluctuation Provide ESD protection and limit current when a charger is reversely connected Min. 0.022µF 100Ω 300Ω Typ. 0.1µF 220Ω 2kΩ Max. 1.0µF 330Ω 4kΩ Rev. 1.2 August 2008 www.aosmd.com Page 14 of 17 AOZ9004B Package Dimensions, TSSOP-8L Gauge Plane D e C Seating Plane 0.25 L E E1 θ 12°(4X) A2 0.1 A A1 b Recommended Land Pattern Dimensions in millimeters Symbols A A1 A2 b C D E E1 e L θ Min. — 0.05 0.80 0.19 0.09 2.90 Nom. — — 1.00 — Max. 1.20 0.15 1.05 0.30 0.20 3.10 4.50 0.75 8° Dimensions in inches Symbols A A1 A2 b C D E E1 e L θ Min. — 0.002 0.031 0.007 0.004 0.114 Nom. — — 0.039 — Max. 0.047 0.006 0.041 0.012 1.00 6.00 0.65 0.40 UNIT: mm — 3.00 6.40 BSC 4.30 4.40 0.65 BSC 0.45 0.60 0° — — 0.008 0.118 0.122 0.252 BSC 0.169 0.173 0.177 0.026 BSC 0.018 0.024 0.030 0° — 8° Notes: 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. 6. Refer to JEDEC MO-153(AA). Rev. 1.2 August 2008 www.aosmd.com Page 15 of 17 AOZ9004B Tape and Reel Dimensions, TSSOP-8L TSSOP-8 Carrier Tape D1 T See Note 5 E1 E2 B0 See Note 5 K0 A0 Unit: mm Package TSSOP-8 (12mm) A0 6.80 ±0.10 B0 3.40 ±0.10 K0 1.60 ±0.10 D0 1.50 ±0.10 D1 1.50 Min. E 12.00 ±0.30 E1 1.75 ±0.10 E2 5.50 ±0.05 P0 8.00 ±0.10 P1 4.00 ±0.10 P2 2.00 ±0.10 T 0.30 ±0.05 D0 E P1 P2 See Note 3 P0 Feeding Direction TSSOP-8 Reel W1 S G M V R H W Tape Size Reel Size M N W 12mm ø330 ø178.00 ø60.00 13.00 ±0.50 ±0.10 +1.50/-0.00 W1 16.00 ±1.00 H K ø13.50 10.60 ±0.50 S 2.00 ±0.50 G — R — V — N K TSSOP-8 Tape Leader/Trailer & Orientation Trailer Tape 300mm min. or 75 empty pockets Components Tape Orientation in Pocket Leader Tape 500mm min. or 125 empty pockets Rev. 1.2 August 2008 www.aosmd.com Page 16 of 17 AOZ9004B AOZ9004B Package Marking Z9004B FAYWLT Part Number Code Fab & Assembly Location Assembly Lot Code Year & Week Code Rev. 1.2 August 2008 www.aosmd.com Page 17 of 17
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