09-0625-71

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T FMMT591 SOT-23 TRANSISTOR (PNP) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V Collector Current -1 A ICM Peak Pulse Current -2 A PC Collector Power Dissipation 250 mW Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ IC RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA, IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO1 IC=-10mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA hFE(1) VCE=-5V, IC=-1mA 100 100 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(2) 1 VCE=-5V, IC=-500mA hFE(3) 1 VCE=-5V, IC=-1A 80 hFE(4) 1 VCE=-5V, IC=-2A 15 300 VCE(sat)1 1 IC=-500mA, IB=-50mA -0.3 V VCE(sat)2 1 IC=-1A, IB=-100mA -0.6 V IC=-1A, IB=-100mA -1.2 V -1 V VBE(sat) 1 Base-emitter voltage VBE Transition frequency fT Collector output capacitance 1 Symbol 1 Cob VCE=-5V, IC=-1A VCE=-10V,IC=-50mA,,f=100MHz VCB=-10V,f=1MHz 150 MHz 10 pF Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%. www.cj-elec.com 1 D,Oct,2014 A,Jun,2014 Typical Characteristics hFE Static Characteristic -400 -1000 —— IC -2mA -1.8mA o Ta=100 C -1.4mA -1.2mA DC CURRENT GAIN COLLECTOR CURRENT hFE -1.6mA -300 IC (mA) -350 -250 -1.0mA -200 -800uA -600uA -150 -400uA -100 -100 IB=-200uA -50 -0 VCE=-5V -10 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -1000 —— -10 VCE -12 -1 -10 -100 COLLECTOR CURRENT (V) IC VBEsat -2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) o Ta=25 C -100 Ta=100℃ Ta=25℃ -10 IC -1000 (mA) IC —— -1000 Ta=25℃ Ta=100℃ β=10 -1 -0.1 -1 -10 -100 COLLECTOR CURRENT VBE —— -100 COLLECTOR CURRENT IC Cob/ Cib 1000 IC -1000 (mA) —— VCB/ VEB o (pF) Ta=25 C C Ta=25℃ -600 -400 CAPACITANCE BASE-EMMITER VOLTAGE (mA) -10 -800 Ta=100℃ 100 Cib -200 -0 -0.1 Cob VCE=-5V -1 -10 COLLCETOR CURRENT fT —— -100 IC 10 -1000 0 IC COLLECTOR POWER DISSIPATION Pc (mW) fT www.cj-elec.com 6 8 Pc 300 VCE=-10V o Ta=25 C IC 10 —— 12 V 14 16 18 20 (V) Ta 250 200 150 100 50 0 -60 -10 COLLECTOR CURRENT 4 REVERSE VOLTAGE 100 10 -3 2 (mA) (MHz) 500 TRANSITION FREQUENCY -1 f=1MHz IE=0/ IC=0 VBE (mV) -1000 IC β=10 -100 -0.1 -1000 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃) D,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 D,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 4 D,Oct,2014 A,Jun,2014