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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3906T SOT-523 TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction z Complementary NPN Type Available z Also Available in Lead Free Version z 1. BASE 2. EMITTER MARKING:3N 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Value Units Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -200 mA PC Collector Power Dissipation 150 mW RƟJA Thermal Resistance, Junction to Ambient 833 ℃/W TJ Operating Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA Collector cut-off current ICEX VCB=-30V,VBE(off)=-3V -0.05 μA hFE(1) VCE=-1V,IC=-0.1mA hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.85 V VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT VCE=-20V,IC=-10mA,f=100MHz 60 -0.65 300 250 MHz Collector output capacitance Cobo VCB=-5V,IE=0,f=1MHz 4.5 Input capacitance Ciob VEB=-0.5V,IE=0,f=1MHz 10 pF Noise figure NF VCE=-5V,Ic=0.1mA, f Ω VCC=-3V, VBE(OFF)=-0.5V IC=-10mA , IB1=-1mA 4 dB 35 nS 35 nS 225 nS 75 nS Delay time td Rise time tr Storage time tS Fall time tf www.cj-elec.com VCC=-3V, IC=-10mA IB1= IB2=-1mA 1 pF D,Mar,2016 A,Jun,2014 Typical Characteristics Static Characteristic -80 hFE 200 DC CURRENT GAIN COLLECTOR CURRENT IC Ta=100℃ -350uA -300uA -250uA -200uA -40 —— COMMON EMITTER VCE=-1V COMMON EMITTER Ta=25℃ -400uA -60 hFE 300 -500uA -450uA IC (mA) -100 -150uA Ta=25℃ 100 -100uA -20 IB=-50uA 0 -0.1 -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -20 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC -200 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -10 β=10 -0.0 -3 -1 -30 -10 COLLECTOR CURRENT IC -100 IC -100 -200 -1 -3 (mA) -10 -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 -30 Ta=25℃ Cob (pF) Ta=100℃ Cib C -10 CAPACITANCE IC (mA) COMMON EMITTER VCE=-1V COLLECTOR CURRENT -200 (mA) -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.1 -1.2 fT 600 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 250 —— -10 -20 (V) Ta VCE=-20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 400 200 200 150 100 50 0 -1 -3 -10 COLLECTOR CURRENT www.cj-elec.com -30 IC 0 -50 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) D,Mar,2016 A,Jun,2014 SOT-523 Package Outline Dimensions Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ Dimensions In Millimeters Max. Min. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° SOT-523 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2016 A,Jun,2014 SOT-523 Tape and Reel www.cj-elec.com 4 D,Mar,2016 A,Jun,2014