2N3375

2N3375 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. PACKAGE STYLE TO- 60(ISOLATED) FEATURES INCLUDE: • Isolated Package MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 1.5 A 40 V 11.6 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 15 C/W O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCEX BVCBO ICEO IEBO hFE VCE(SAT) Cob ft Pout GP η TC = 25 C O TEST CONDITIONS IC = 200 mA VBE = -1.5 V IC = 500 µA VCE = 30 V VEB = 4.0 V VCE = 5.0 V IC = 500 mA VCB = 30 V VCE = 28 V VCE = 28 V IC = 150 mA Pin = 1.0 W IC = 250 mA IB = 100 mA f = 1.0 MHz f = 100 MHz f = 400 MHz IC = 100 mA MINIMUM TYPICAL MAXIMUM 40 65 65 100 100 10 1.0 10 500 3.0 4.8 40 UNITS V V V µA µA --V pF MHz W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1