2N3866A

2N3866A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N3866A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC O O 400 mA 30 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W O O O O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICEX ICEO IEBO hFE VCE(SAT) ft COB GPE ηc IC = 5.0 mA IC = 5.0 mA IC = 100 µA VCE = 55 V VCE = 30 V VCE = 28 V VEB = 3.5 V VCE = 5.0 V IC = 100 mA VCE = 15 V VCB = 28 V VCC = 28 V TC = 25 C O NONE TEST CONDITIONS RBE = 10 Ω VBE = -1.5 V VBE = -1.5 V TC = 200 C O MINIMUM 30 55 3.5 TYPICAL MAXIMUM UNITS V V V 100 500 20 100 µA µA µA --V MHz IC = 50 mA IC = 360 mA IB = 20 mA IC = 50 mA f = 200 MHz f = 1.0 MHz Pout = 1.0 W f = 400 MHz 25 5.0 200 1.0 800 3.0 10 45 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1