2N5070

2N5070 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5070 is Designed for High Power Linear Amplifier Application in the 2.0 to 75 MHz Range. PACKAGE STYLE TO- 60 FEATURES INCLUDE: • Emitter Ballasted • Common Emitter Package MAXIMUM RATINGS IC VCE PDISS TSTG θJC O 3.3 A 10 A (PEAK) 30 V 70 W @ TC = 25 C -65 C to +200 C 2.5 C/W O O O 1 = EMITTER 3 = COLLECTOR 2 = BASE CASE = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCER ICEO ICEV ICBO IEBO hFE Cob ft Pin η IMD TC = 25 C O TEST CONDITIONS IC = 200 mA IC = 200 mA VCE = 30 V VCE = 60 V VCE = 60 V VCB = 60 V VEB = 4.0 V VCE = 5.0 V IC = 1.0 A IC = 3.0 A f = 1.0 MHz IC = 1.0 A Pout = 25 W (PEP) f2 = 30.001 MHz f = 50 MHz Zg = 50 Ω VBE = -1.5 V VBE = -1.5 V TC = 150 C O MINIMUM TYPICAL MAXIMUM 30 40 5.0 10 10 10 10 10 10 100 100 85 100 1.25 40 -30 UNITS V V mA mA mA mA --pF MHz W % dB RBE = 5.0 Ω VCB = 30 V VCE = 15 V VCE = 28 V f1 = 30 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1