2N6439

2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. PACKAGE STYLE .500 6L FLG FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability • All Gold Metalization MAXIMUM RATINGS VCB PDISS 60 V 146 W @ TC = 25 °C 1 = Collector 2 = Base 3 & 4 = Emitter TSTG θJC -65 °C to +200 °C 1.2 °C/W CHARACTERISTICS SYMBOL BVCBO BVCES BVCBO hFE COB GPe GPe ηC Ψ VCE = 28 V IC = 50 mA IC = 50 mA IE = 5.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 33 60 4.0 UNITS V V V IC = 1.0 A f = 1 MHz POUT = 60 W POUT = 60 W f =225- 400 MHz f = 400 MHz 10 67 7.8 7.8 55 30:1 8.5 10.0 100 75 --pF dB % --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1/1