2N918

2N918 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS IC VCE PDISS TJ TSTG 50 mA 15 V 300 mW @ TC = 25 C 200 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C O O O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE CHARACTERISTICS SYMBOL BVCEO BVCBO ICBO BVEBO hFE VCE(SAT) VBE(SAT) ft Cob Cib NF Gpe Pout η TC = 25 C O NONE TEST CONDITIONS IC = 3.0 mA IC = 1.0 µA VCB = 15 V VCB = 15 V IE = 10 µA VCE = 1.0 V IC = 10 mA IC = 10 mA VCE = 10 V VCB = 0 V VCB = 10 V VEB = 0.5 V VCE = 6.0 V VCB = 12 V VCB = 15 V IC = 1.0 mA IC = 6.0 mA IC = 8.0 mA IC = 3.0 mA IB = 1.0 mA IB = 1.0 mA IC = 4.0 mA f = 100 MHz f = 140 KHz f = 140 KHz f = 140 KHz f = 60 MHz f = 200 MHz f = 500 MHz TA = 150 C O MINIMUM TYPICAL MAXIMUM 15 30 0.01 1.0 3.0 20 0.4 1.0 600 3.0 1.7 2.0 6.0 15 30 25 UNITS V V µA V --V V MHz pF pF dB dB mW % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1