2SC1251

2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. FEATURES INCLUDE: • Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz • Gold Metalization PACKAGE STYLE .204 4L STUD MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC O O 300 mA 45 V 5.3W @ TC = 25 C -65 C to +200 C -65 C to +150 C 33 C/W O O O O 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO hFE COB PG P1dB TC = 25 C O TEST CONDITIONS IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 15 V VCE = 15 V IC = 100 mA IC = 100 mA f = 1.0 MHz POUT = 0.5 W f = 1000 MHz MINIMUM TYPICAL MAXIMUM 25 45 3.0 20 200 3.0 13 +27 +29 UNITS V V V --pF dB dBm A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/2 TVU005B S - PARAMETERS VCE = 20 Volts, FREQ. MHz 100 200 300 400 500 600 700 800 900 1,000 ID = 150 mA S12 S22 ANG. 30 30 30 30 35 35 35 40 45 45 S11 MAG. 0.735 0.840 0.860 0.857 0.855 0.850 0.850 0.850 0.855 0.860 S21 ANG. 190 188 181 178 173 170 168 165 163 161 MAG. 13.65 8.15 5.75 4.25 3.50 2.80 2.45 2.20 2.00 1.75 ANG. 115 100 90 80 70 66 60 55 50 45 MAG. 0.025 0.025 0.025 0.030 0.035 0.035 0.040 0.045 0.050 0.055 MAG. 0.364 0.275 0.280 0.285 0.300 0.310 0.320 0.330 0.340 0.350 ANG. 280 240 240 230 225 220 215 210 215 215 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 2/2