2SC1946A

2SC1946A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1946A is Designed for 12.5 V 175 MHz Large-Signal Power Amplifier Applications. PACKAGE STYLE .380" 4L FLG FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W B .112 x 45° A Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS F C D E HI IC VCE VCB PDISS TJ TSTG θJC 8.0 A 16 V 36 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.75 °C/W DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm G MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE Cob GPE η ψ IC = 25 mA IC = 25 mA IE = 5.0 mA VCE = 15 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 16 4.0 5.0 UNITS V V V mA --pF DB % VCE = 5.0 V VCB = 15 V VCC = 12.5 V VCC = 15.5 V IC = 1.0 A f = 1.0 MHz Pout = 30 W f = 175 MHz 40 75 75 150 100 10 60 11 70 No Degradation in Power Output PIN = 2.0 dB Overdrive Load VSWR = 30:1 ALL PHASE ANGLES A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1