2SC1971

2SC1971 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • Replaces Original 2SC1971 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 2.0 A 35 V 12.5 W @ TC = 25 °C -55 °C to +150 °C 10 °C/W 1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE COB GPE η POUT IC = 50 mA IC = 10 mA TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 17 35 4.0 500 500 UNITS V V V µA µA --pF dB % W IE = 5.0 mA VCES = 25 V VEB = 3.0 V VCE = 10 V VCB = 30 V VCC = 13.5 V PIN = 0.6 W IC = 100 mA f = 1.0 MHz f =175 MHz 10 50 15 180 10 60 6.0 70 7.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1