2SC2782

2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG C A 3 D 1 2x Ø N FULL R FEATURES: • 175 MHz 12.5 V • PG = 6.4 dB at 80 W/175 MHz • Omnigold™ Metalization System • Common Emitter configuration DIM A B C .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 D E F G H I J K L M N .120 / 3.05 .970 / 24.64 .090 / 2.29 .150 / 3.81 B G 2 .725/18,42 F 4 E K H M INIM UM inches / m m M L J I M AXIM UM inches / m m .150 / 3.43 .045 / 1.14 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .125 / 3.18 . 725 / 18.42 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 20 A 36 V 16 V 4.0 V 220 W @ TC = 25 °C -65 °C to +175 ° C -65 °C to +175 °C 0.68 °C/W 1 = Collecttor 2 = Base 3&4 = Emitter CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO hFE COB PG ηC ZIN ZCL IC = 50 mA IC = 20 mA IE = 1.0 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 UNITS V V V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V PIN = 18 W VCC = 12.5 V VCC = 12.5 V IC = 10 A f = 1.0 MHz POUT = 80 W POUT = 80 W POUT = 80 W f = 175 MHz f = 175 MHz f = 175 MHz 10 6.4 60 ----6.8 70 1.0 + j1.5 1.2 + j1.8 100 390 --pF dB % ----- Ω Ω A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1