2SC2879

2SC2879 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up tp 28 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: • PG = 13 Typ. min. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W(PEP) • Omnigold™ Metalization System E C Ø.125 NOM. C B B E H D G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 25 A 45 V 18 V 4.0 V 250 W @ TC = 25 °C -65 °C to +175 °C -65 °C to +175 °C 0.6 °C/W DIM A B C D E F G H I J K L .980 / 24.89 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .245 / 6.22 .720 / 18.28 .125 / 3.18 MINIMUM inches / mm IJ K MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO hFE COB GP ηC IMD3 ZIN ZOUT TC = 25 °C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IE = 10 mA VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V POUT = 100 W VCC = 12.5 V VCC = 12.5 V Iidle = 100 mA IC = 10 A f = 1.0 MHz f = 28 MHz MINIMUM TYPICAL MAXIMUM 45 18 4.0 10 700 13.0 35 ----15.2 -24 150 UNITS V V V --pF dB % dBc Ω Ω POUT = 100 W POUT = 100 W f = 28 MHz f = 28 MHz 1.45 – j0.95 1.45 – J1.0 ----- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1