2SC2905

2SC2905 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2905 is designed for high power amplifier applications in UHF band. FEATURES: • Emitter Ballasted construction. • PG = 4.8 dB at 45 W/520 MHz • Omnigold™ Metalization System • Common Emitter PACKAGE STYLE .500 6L FLG C A 2x ØN FU LL R D B G .725/18,42 F E MAXIMUM RATINGS H K J I L M IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 15 A 35 V 17 V 36 V 4.0 V 120 W @ TC = 25°C -55 °C to +175 °C -55 °C to +175 °C 1.0 °C/W D IM A B C D E F G H I J K L M N M IN IM U M inche s / m m M AX IM U M inche s / m m .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 . 725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE Cob PG ηC IC = 1.0 A IC = 10 mA IE = 10 mA VCB = 15 V VCE = 3.0 V VCE = 10 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 17 35 4.0 2.0 3.0 UNITS V V mA mA --pF dB % IC = 1.0 A f = 1.0 MHz POUT = 45 W f = 520 MHz 10 200 150 VCB = 12.5 V VCE = 12.5 V 4.8 60 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1