40822

40822 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 40822 is a N-Channel DualGate Depletion Type Transistor With Monolithic Gate Protection Diodes, used in RF,IF Amplifier and Mixer Applications up to 150 MHz. PACKAGE STYLE TO-72 MAXIMUM RATINGS ID VD PDISS TJ TSTG 50 mA 24 V 330 mW @ TA = 25 OC -65 OC to +175 OC -65 OC to +175 OC 1 = Drain 3 = Gate #1 2 = Gate #2 4 = Source, Case, and Substrate CHARACTERISTICS SYMBOL VG1S(OFF) VG2S(OFF) IG1SSF IG1SSR IG2SSF IG2SSR IDS V(BR)G1 V(BR)G2 gfs Crss Ciss Coss GPS NF VDS = 15 V VDS = 15 V TA = 25 C O NONE TEST CONDITIONS VG2S = 4.0 V VG1S = 0 V ID = 50 µA ID = 50 µA MINIMUM TYPICAL -2.0 -2.0 MAXIMUM -4.0 -4.0 50 50 50 50 UNITS V V µA µA µA µA mA V V µmho VG1S = 6.0 V VG2S = 6.0 V VDS = 15 V IG1 = ±100 µA IG2 = ±100 µA VDS = 15 V f = 1.0 KHz VDS = 15 V f = 1.0 MHz VDS = 15 V = 200 MHz VG2S = VDS = 0 V VG1S = VDS = 0 V VG1S = 0 V VG2S = 4.0 V 5.0 15 9.0 9.0 VG2S = 4.0 V VG2S = 4.0 V VG2S = 4.0 V ID = 10 mA ID = 10 mA ID = 10 mA f 0.005 6.5 2.0 19 24 2.0 12000 VG1S = -6.0 V VG2S = VDS = 0 V VG2S = -6.0 V VG1S = VDS = 0 V 30 0.03 9.5 pF dB 3.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without REV. A 1/1