AM80912-015

AM80912-015 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM80912-015 is designed for avionics applications, including JTIDS. It is housed in a Hermetic Package. PACKAGE STYLE .310 2L FLG 4 x .062 x 45° 2xB D G ØE F A .040 x 45° C FEATURES: • Internal Input/Output Matching Network • PG = 8.1 dB at 15 W/ 1215 MHz • Omnigold™ Metalization System • 28 V Operations • Common Base configuration M H I J K L R N DIM A B C D M INIMUM inches / mm P MAXIMUM inches / mm .095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .552 / 14.02 .790 / 20.07 .300 / 7.62 .003 / 0.08 .052 / 1.32 .118 / 3.00 .105 / 2.67 .120 / 3.05 .306 / 7.77 .130 / 3.30 .318 / 8.08 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 1.8 A 32 V 50 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 3.0 °C/W E F G H I J K L M N P R .572 / 14.53 .810 / 20.57 .320 / 8.13 .006 / 0.15 .072 / 1.83 .131 / 3.33 .230 / 5.84 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG ηC IC = 10 mA IC = 10 mA IE = 1 mA VCE = 28 V VCE = 5.0 V VCC = 28 V PIN = 2.3 W TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω VBE = 0 V IC = 500 mA POUT = 15 W f = 960 - 1215 MHz MINIMUM TYPICAL MAXIMUM 55 55 3.5 2.0 15 8.1 45 8.9 49 150 UNITS V V V mA --dB % Pulse format: 6.4 µsec on 6.6 µsec off, repeat for 3.3 ms, Then off for 4.5125 ms Duty Cycle: Burst 49.2%, overall 20.8% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1