AM81214-015

AM81214-015 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM81214-015 is an NPN silicon bipolar transistor designed for L-Band pulsed radar applications. It utilizes internal matching and gold metalization for high reliability and good VSWR capability. PACKAGE STYLE .250 2L FLG FEATURES: • 1.2 to 1.4 GHz operation • Internal Input/Output Matching Network • PG = 8.5 dB at 14.5 W/1400 MHz • Omnigold™ Metalization System • 5:1 VSWR capability rated at conditions MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 1.8 A 32 V 37.5 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 4.0 °C/W Common Base CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE IC = 15 mA IC = 15 mA IE = 1.5 mA VCE = 28 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω VBE = 28 V IC = 1.0 A MINIMUM TYPICAL MAXIMUM 48 48 3.5 1.5 30 300 UNITS V V V mA --- VCE = 5.0 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/2 AM81214-015 ERROR! REFERENCE SOURCE NOT FOUND. CHARACTERISTICS SYMBOL PG ηC TC = 25 °C NONETEST CONDITIONS VCC = 28 V PIN = 2.0 W POUT = 15 W f = 1.2 to 1.4 GHz MINIMUM TYPICAL MAXIMUM 8.5 48 UNITS dB % Pulse width = 1000 µsec, Duty Cycle = 10% IMPEDANCE DATA FREQ 1.2 GHz 1.3 GHz 1.4 GHz ZIN (Ω) 3.0 + j6.5 3.5 + j7.5 5.0 + j7.0 ZCL (Ω) 16 + j3.0 13 + j6.0 11 + j5.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2