AM82731-001

AM82731-001 NPN RF POWER TRANSISTOR DESCRIPTION: The AM82731-001 is a Common Base Device Designed for Pulsed SBand Radar Amplifier Applications. PACKAGE STYLE 400 2NL FLG DIM MINIMUM inches / mm MAXIMUM inches / mm FEATURES INCLUDE: 2X B 4x .062 x 45° ØD A .025 x 45° A B C E D E F G .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890 / 22.61 .395 / 10.03 .004 / 0.10 .052 / 1.32 .118 / 3.00 .030 / 0.76 .396 / 10.06 .130 / 3.30 .407 / 10.34 • Input/Output Matching • Gold Metallization • Emitter Ballasting C F G H I J K P H I J K L M N P .660 / 16.76 .910 / 23.11 .415 / 10.54 .007 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 L MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 0.45 A 34 V 11.5 W @ TC = 25 °C -65 °C to+250 °C -65 °C to+200 °C 13.0 °C/W M N 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCER ICES BVEBO hFE POUT ηC PG Note: TC = 25 °C TEST CONDITIONS IC = 1.0 mA IC = 1.0 mA VCE = 30 V IE = 1.0 mA VCE = 5 V VCE = 30 V IC = 100 mA PIN = 0.3 W f = 2.7 to 3.1 GHz RBE = 10 Ω MINIMUM 45 45 TYPICAL MAXIMUM UNITS V V 0.5 3.5 10 1.0 27 5.2 1.1 30 5.6 mA V --W % dB Pulse Width = 100 μS Duty Cycle = 10% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. 1/1