AM82731-012

AM82731-012 NPN RF POWER TRANSISTOR DESCRIPTION: The AM82731-012 is a Common Base Device Designed for Pulsed SBand Pulse output and driver Radar Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 2.0 A 46 V 50 W @ TC ≤ 50 °C -65 °C to+250 °C -65 °C to+200 °C 4.0 °C/W 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE POUT ηC PG Note: TC = 25 °C TEST CONDITIONS IC = 7.0 mA IC = 7.0 mA IE = 1.0 mA VCE = 40 V VCE = 5 V VCC = 40 V IC = 600 mA PIN = 3.0 W f = 2.7 to 3.1 GHz RBE = 10 Ω MINIMUM 55 55 3.5 TYPICAL MAXIMUM UNITS V V V 0.5 30 12 30 6.0 300 mA --W % dB Pulse Width = 100 μS Duty Cycle = 10% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. 1/1