AP1266

AP1266 SILICON PIN DIODE DESCRIPTION: The AP1266 is a Passivated Epitaxial Silicon PIN Diode in a Hermetically Sealed Glass Package Designed for Large Signal Switches. PACKAGE STYLE -11 MAXIMUM RATINGS I V PDISS TJ TSTG TSOLD O O 100 mA 200 V 1.0 W @ TC = 25 C -65 C to +175 C -65 C to +175 C 200 C O O O O NONE CHARACTERISTICS SYMBOL VB CT RS TL I-REGION IR = 10 µA V = 50 V IF = 50 mA IF = 10 mA TC = 25 C O TEST CONDITIONS f = 1.0 MHz f = 100 MHz IR = 6.0 mA MINIMUM 200 TYPICAL MAXIMUM 1.5 0.6 UNITS V pF Ohms µS mS 3.0 3.0 I-REGION WIDTH A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1