CBSL1SL
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL1SL is Designed for Class A, Cellular Base Staion Applications up to 960 MHz.
PACKAGE STYLE .280 4L PILL
A
FEATURES:
• Class A Operation • PG = 10 dB at 1.0 W/960 MHz • Omnigold™ Metalization System
E
ØB
C
B
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC
O O
E
ØC
0.250 A 40 V 28 V
DIM
D E F
MINIMUM
inches / mm
MAXIMUM
inches / mm
3.5 V 7.0 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 25 C/W
O O O O
A B C D E F
.220 / 5.59
.230 / 5.84 1.055 / 26.80
.275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00
.285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30
ORDER CODE: ASI10578
O
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICBO hFE COB PG
TC = 25 C
NONETEST CONDITIONS
IC = 1.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 24 V VCE = 5.0 V VCB = 24 V VCC = 24 V POUT = 1.0 W ICQ = 125 mA IC = 100 mA f = 1.0 MHz f = 960 MHz
MINIMUM TYPICAL MAXIMUM
40 28 3.5 0.5 20 120 5.0 10
UNITS
V V V mA --pF dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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