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ASI10609

ASI10609

  • 厂商:

    ASI

  • 封装:

  • 描述:

    ASI10609 - NPN SILICON RF POWER TRANSISTOR - Advanced Semiconductor

  • 数据手册
  • 价格&库存
ASI10609 数据手册
HF220-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-28 is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R L FEATURES: • PG = 12 dB min. at 220 W/30 MHz • IMD3 = -30 dBc max. at 220 W (PEP) • Omnigold™ Metalization System C B E C Ø.125 NOM. B E H D G F E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC O O IJ K 16 A 70 V 35 V 4.0 V 320 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.7 OC/W O O O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67 ORDER CODE: ASI10609 CHARACTERISTICS SYMBOL BV CEO BV CES BV EBO ICEO ICES hFE COB GP IMD3 ηC Load Mismatch IC = 200 mA IC = 100 mA IE = 20 mA VCE = 30 V VCE = 35 V VCE = 5.0 V VCB = 28 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 35 70 4.0 5.0 5.0 UNITS V V V mA mA --pF dB dBc % VSWR IC = 7.0 A f = 1.0 MHz 15 --12 450 --40 50 ---30 VCE = 28 V ICQ = 750 mA POUT = 220 W VCE = 28 V ICQ = 750 mA POUT = 220 W --- :1 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ERROR! REFERENCE SOURCE NOT FOUND. A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • TELEX: 18-2651 • FAX (818) 765-3004
ASI10609 价格&库存

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