ASI2223-20_07

ASI2223-20 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications PACKAGE STYLE .310 2L FLG 4 x .062 x 45° 2xB D G ØE F A . 040 x 45° C FEATURES: • Internal Input/Output Matching Networks • Emitter Balasting • Omnigold™ Metalization System M H I J K L R N DIM A B M INIMUM inches / mm P MAXIMUM inches / mm .095 / 2.41 .100 / 2.54 .050 / 1.27 .286 / 7.26 .110 / 2.79 .306 / 7.77 .148 / 3.76 .400 / 10.16 .119 / 3.02 .552 / 14.02 .790 / 20.07 .300 / 7.62 .003 / 0.08 .052 / 1.32 .118 / 3.00 .105 / 2.67 .120 / 3.05 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 3.0 A 25 V 55 W @ TC ≤ 50 °C -65 °C to +200 °C -65 °C to +200 °C 2.7 °C/W C D E F G H I J K L M N P R .306 / 7.77 .130 / 3.30 .318 / 8.08 .572 / 14.53 .810 / 20.57 .320 / 8.13 .006 / 0.15 .072 / 1.83 .131 / 3.33 .230 / 5.84 ORDER CODE: ASI10533 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO hFE PG ηC IC = 12 mA IC = 25 mA IE = 2.5 mA VCB = 22 V VCE = 5.0 V VCC = 22 V TC = 25 °C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 2.5 UNITS V V V mA --dB % IC = 2.0 A POUT = 20 W f = 2.2 – 2.3 GHz 30 7.0 40 300 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1