ASI30304

MSC3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC3005 is Designed for Class "C" Amplifier Applications up to 3 GHz. PACKAGE STYLE .250 2L FLG A ØD C E C .060 x 45° CHAMFER FEATURES: • POUT = 5.0 W Typ. at 3 GHz • Common Base Configuration • Omnigold™ Metellization System B E G L H J F I K Base is connected to flange M NP MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 700 mA 30 V 17 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 8.5 C/W O O O O O O DIM A B C D E F G H I J K L M N P MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 ASI ORDER CODE: ASI30304 O CHARACTERISTICS SYMBOL BVCER BVCBO BVEBO ICBO hFE COB PG ηC IC = 5.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCC = 28 V TC = 25 C NONE TEST CONDITIONS RBE = 10Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 0.5 UNITS V V V mA --pF dB % IC = 500 mA f = 1.0 MHz POUT = 4.5 W f = 3.0 GHz 20 120 7.5 4.5 30 5.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1