ASIMV1807J1

MV1807J1 SILICON VARACTOR DIODE DESCRIPTION: The ASI MV1807J1 is a Diffused Epitaxial Varactor Diode Designed for Multiplier Applications. PACKAGE STYLE DO-4 MAXIMUM RATINGS I V PDISS TJ TSTG θJC O O 100 mA 80 V 21 W @ TC = 25 C -65 C to +150 C -65 C to +175 C 6.0 C/W O O O O Cathode to case CHARACTERISTICS SYMBOL VB CT RS FOUT POUT FIN PIN IR = 10 µA VR = 6.0 V VR = 6.0 V TC = 25 C O NONE TEST CONDITIONS f = 1.0 MHz f = 50 MHz MINIMUM 80 10.8 TYPICAL MAXIMUM 13.2 UNITS V pF Ohms MHz W MHz W 0.25 1000 25.1 500 37.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1