ASISD1006

SD1006 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI SD1006 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC VCEO VCBO PDISS TJ TSTG θJC 400 mA 30 V 50 V 3.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 50 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR NONE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICEO hFE ft Cob Cib NFNB NFBB GVE XMOD 2NDO TC = 25 °C TEST CONDITIONS IC = 5.0 mA IC = 100 µA IE = 100 µA VCE = 28 V VCE = 15 V VCE = 15 V VCB = 30 V VEB = 0.5 V VCE = 10 V VCE = 15 V VCE = 15 V VCE = 15 V VCE = 15 V MINIMUM 30 50 5.0 TYPICAL MAXIMUM UNITS V V V µA --MHz pF pF dB dB dB dB dB IC = 50 mA IC = 50 mA f = 100 KHz f = 100 KHz f = 2000 MHz f = 216 MHz f = 216 MHz Pout = +45 dbmV Pout = +45 dbmV 30 1500 100 300 1800 2.5 8.0 2.7 7.0 7.2 -60 -60 3.5 10 8.0 6.8 -57 -50 IC = 10 mA IC = 50 mA IC = 50 mA IC = 50 mA IC = 50 mA A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1